Pd/GaN(0001) interface properties

• Autorzy: Grodzicki M. , Mazur P , Zuber S. , Pers J , Ciszewski A.

Identyfikatory

DOI

10.2478/s13536-013-0183-8

• Języki publikacji: EN

Abstrakty

EN

Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wrocław, Poland This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED). As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.

Słowa kluczowe

EN

gallium nitride; palladium; metal-semiconductor junction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 2
• Strony: 252--256
• Opis fizyczny: Bibliogr. 14 poz., rys., wykr.

Twórcy

autor

Grodzicki M.

• Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wrocław, Poland

autor

Mazur P

• Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wrocław, Poland

autor

Zuber S.

• Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wrocław, Poland

autor

Pers J

autor

Ciszewski A.

• Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204 Wrocław, Poland

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