The impact of atomic layer deposition technological parameters on optical properties and morphology of Al2O3 thin films

• Autorzy: Dobrzanski L. A. , Szindler M. , Szindler M. , Hajduk B. , Kotowicz S.

Identyfikatory

DOI

10.5277/oa150412

• Języki publikacji: EN

Abstrakty

EN

This paper presents some results of investigations on aluminum oxide Al2O3 thin films prepared by the atomic layer deposition method on polished monocrystalline silicon. It has been described how the technological parameters of the deposition process, like the number of cycles and substrate temperature, influenced the optical properties and morphology of prepared thin films. Their physical and optical properties like thickness, uniformity and refractive index have been investigated with spectroscopic ellipsometry, atomic force microscopy and UV/vis optical spectroscopy.

Słowa kluczowe

EN

thin film; aluminum oxide; atomic layer deposition

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2015
• Tom: Vol. 45, nr 4
• Strony: 573--583
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Dobrzanski L. A.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18a, 44-100 Gliwice, Poland

autor

Szindler M.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18a, 44-100 Gliwice, Poland

autor

Szindler M.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18a, 44-100 Gliwice, Poland

autor

Hajduk B.

• Center of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, 41-819 Zabrze, Poland

autor

Kotowicz S.

• Center of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, 41-819 Zabrze, Poland

Bibliografia

• [1] DOMARADZKI J., BORKOWSKA A., KACZMAREK D., PROCIÓW E.L., Properties of transparent oxide thin films prepared by plasma deposition, Optica Applicata 35(3), 2005, pp. 425–430.
• [2] BORKOWSKA A., DOMARADZKI J., KACZMAREK D., Influence of Eu dopant on optical properties of TiO2 thin films fabricated by low pressure hot target reactive sputtering, Optica Applicata 37(1–2), 2007, pp. 117–122.
• [3] MAZUR M., WOJCIESZAK D., DOMARADZKI, J., KACZMAREK D., SONG S., PLACIDO F., TiO2 /SiO2 multilayer as an antireflective and protective coating deposited by microwave assisted magnetron sputtering, Opto-Electronics Review 21(2), 2013, pp. 233–238.
• [4] JONG-HONG LU, JEN-WEI LUO, SHIOU-RUEI CHUANG, BO-YING CHEN, Antireflection coatings with SiOx-TiO2 multilayer structures, Japanese Journal of Applied Physics 53(11S), 2014, article 11RA06.
• [5] CHANG G.K., Antireflection layer coatings on the Si solar cell using SiO2 and Si3N4 , Materials Science Forum 449(4), 2004, pp. 1013–1016.
• [6] KEDAWAT G., SRIVASTAVA S., KUMAR JAIN V., KUMAR P., KATARIA V., AGRAWAL Y., KUMAR GUPTA B., VIJAY Y.K., Fabrication of artificially stacked ultrathin ZnS/MgF2 multilayer dielectric optical filters, ACS Applied Materials and Interfaces 5(11), 2013, pp. 4872–4877.
• [7] LIPINSKI M., ZIEBA P., JONAS S., KLUSKA S., SOKOŁOWSKI M., CZTERNASTEK H., Optimisation of SiNx :H layer for multicrystalline silicon solar cell, Opto-Electronics Review 12(1), 2004, pp. 41–44.
• [8] DOBRZAŃSKI L.A., SZINDLER M., DRYGAŁA A., SZINDLER M.M., Silicon solar cells with Al2O3 antireflection coating, Central European Journal of Physics 12(9), 2014, pp. 666–670.
• [9] LESKELÄ M., RITALA M., Atomic layer deposition (ALD): from precursors to thin film structures, Thin Solid Films 409(1), 2002, pp. 138–146.
• [10] SNEH O., CLARK-PHELPS R.B., LONDERGAN A.R., WINKLER J., SEIDEL T.E., Thin film atomic layer deposition equipment for semiconductor processing, Thin Solid Films 402(1–2), 2002, pp. 248–261.
• [11] SEIDEL T., LONDERGAN A., WINKLER J., XINYE LIU, RAMANATHAN S., Progress and opportunities in atomic layer deposition, Solid State Technology 46(5), 2003, pp. 67–68.
• [12] GRONER M.D., FABREGUETTE F.H., ELAM J.W., GEORGE S.M., Low-temperature Al2O3 atomic layer deposition, Chemistry of Materials 16(4), 2004, pp. 639–645.