Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

• Autorzy: Pucicki D. , Bielak K. , Kudrawiec R. , Radziewicz D. , Ściana B.
• Języki publikacji: EN

Abstrakty

EN

Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of highresolution X-ray diffraction (HRXRD) measurements. The comparison of diffraction curves of two similar samples, with and without nitrogen, together with an assumption of constant indium incorporation efficiency during the growth of layers with and without nitrogen, may lead to a large deviation in the determined In and N content. The HRXRD curve simulations supported by bandgap determination and calculations seem to be a solution of this problem. Comparison of the results achieved from simulated HRXRD curves with the calculations of all QWs transitions measured by contactless electro-reflectance (CER) can lead to reduction of deviations in composition determination of InGaAsN quantum wells. The proposed algorithm was applied for investigation of InGaAsN QWs grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE).

Słowa kluczowe

EN

dilute nitrides; composition determination; quantum well; BAC band-anticrossing model; HRXRD high resolution; X-ray diffraction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2013
• Tom: Vol. 31, No. 4
• Strony: 489--494
• Opis fizyczny: Bibliogr. 15 poz., rys., tab., wykr.

Twórcy

autor

Pucicki D.

autor

Bielak K.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław

autor

Kudrawiec R.

• Inst. of Physics, Wrocław University of Technology, Wyb. Wyspia´nskiego 27, 50-370, Wrocław

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław

Bibliografia

• [1] HENINI M., Dilute Nitride Semiconductors, Elsevier, School of Physics and Astronomy, University of Nottingham, UK, 2005.
• [2] BISPING D. et al., IEEE J. Selected Topics in Quantum Electronics, 15 (2009), 968.
• [3] PTAK A. J., FRANCE R., JIANG C-S, ROMERO M. J.,J. Crystal Growth, 311 (2009), 1876.
• [4] LU W. et al., Semicond. Sci. Technol., 24 (2009), 105016.
• [5] LI W., PESSA M., LIKONEN J., Appl. Phys. Lett., 78 (2001), 2864.
• [6] ALBO A., CYTERMANN C., BAHIR G., FEKETE D., Appl. Phys. Lett., 96 (2010), 141102.
• [7] FAN W.J. et al., Appl. Phys. Lett., 80 (2002), 4136.
• [8] LEIBIGER G., GOTTSCHALCH V., SCHUBERT M., J. Appl. Phys., 90 (2001), 5951.
• [9] YANG X., HEROUX J.B., JURKOVIC M.J., WANG W.I., J. Vac. Sci. Technol. B, 17 (1999), 1144.
• [10] SEONG M. J., HANNA M. C., MASCARENHAS A.,Appl. Phys. Lett., 79 (2001), 3974.
• [11] GRILLO V., ALBRECHT M., REMMELE T., STRUNK H. P., EGOROV A. Y., RIECHERT H., Journal Of Applied Physics, 90 (2001), 3792.
• [12] SHAN W. et al., Phys. Rev. Lett., 82 (1999), 1221.
• [13] ADACHI S., Properties of Semiconductor Alloys: Group – IV, III – V and II – VI Semiconductors, John Wiley & Sons, Ltd., 2009.
• [14] HEROUX J. B., YANG X., WANG W. I., J. Appl.Phys., 92 (2002), 4361.
• [15] KUDRAWIEC R. et al., J. Appl.Phys., 97 (2005), 053515.