Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

• Autorzy: Firek P. , Waśkiewicz M. , Stonio B. , Szmidt J.

Identyfikatory

DOI

10.1515/msp-2015-0095

• Języki publikacji: EN

Abstrakty

EN

This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

Słowa kluczowe

EN

ISFET/MISFET technology; AlN; aluminum nitride; magnetron sputtering

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 4
• Strony: 669--676
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Firek P.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Waśkiewicz M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Stonio B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Szmidt J.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

Bibliografia

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