Influence of a charge region on the operation of InGaAs/InAlAs/InP avalanche photodiodes

• Autorzy: Jurenczyk J , Zak D , Kaniewski J
• Języki publikacji: EN

Abstrakty

EN

Avalanche photodiodes (APDs) operating at 1.55 μm wavelength are used in many different applications. Therefore, specialized devices with modified electrical characteristics are often strongly needed. In order to design and produce such structures, advanced modeling techniques and computer aided design (CAD) software are utilized. In the paper, modeling results of avalanche photodiodes with separated regions of absorption, grading, charge and multiplication (SAGCM) are presented. Simulations of diode structures were performed using APSYS software developed by Crosslight. Extensive calculations allowed for the detailed analysis of individual regions of the device and the determination of their influence on diode characteristics. Simulations showed a pronounced influence of the charge region on characteristics and performance of the device. Changes of the doping level of this layer exhibited strong modification in the band-to-band tunneling effect. Simultaneously it influenced the characteristics related to the Zener effect and carrier transport.

Słowa kluczowe

EN

avalanche photodiode; device modeling; InGaAs

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 39--46
• Opis fizyczny: Bibliogr. 6 poz., wykr.

Twórcy

autor

Jurenczyk J

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland
• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Zak D

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Kaniewski J

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] CAMPBELL J.C., Recent advances in telecommunications avalanche photodiodes, Journal of Lightwave Technology 25(1), 2007, pp. 109–121.
• [2] MCINTYRE R.J., Multiplication noise in uniform avalanche diodes, IEEE Transactions on Electron Devices 13(1), 1966, pp. 164–168.
• [3] KANIEWSKI J., MUSZALSKI J., PIOTROWSKI J., Advanced InGaAs/InAlAs/InP avalanche photodiodes for high-speed detection of 1.55 μm infrared radiation, Proceedings of SPIE 7082, 2008, article 70820F.
• [4] XIAO Y.G., LI Z.Q., SIMON LI Z.M., Dynamic drift-diffusion simulation of InP/InGaAs SAGCM APD, Physica Status Solidi (c) 4(5), 2007, pp. 1641–1645.
• [5] NING LI, RUBIN SIDHU, XIAOWEI LI, FENG MA, XIAOGUANG ZHENG, SHULING WANG, KARVE G., DEMIGUEL S., HOLMES A.L., CAMPBELL J.C., InGaAs/InAlAs avalanche photodiode with undepleted absorber, Applied Physics Letters 82(13), 2003, pp. 2175– 2177.
• [6] PARKS J.W., SMITH A.W., BRENNAN K.F., TAROF L.E., Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes, IEEE Transactions on Electron Devices 43(12), 1996, pp. 2113–2121.