Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

• Autorzy: Dychalska A. , Fabisiak K. , Paprocki K. , Dudkowiak A. , Szybowicz M.

Identyfikatory

DOI

10.1515/msp-2015-0064

• Języki publikacji: EN

Abstrakty

EN

Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD) diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100) substrate in the temperature range of 30 degrees C to 480 degrees C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm(-1) was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing temperature by using two commonly known equations. Comparison of the results obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

Słowa kluczowe

EN

Raman spectroscopy; stress; diamond structure; CVD; diamond films

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 620--626
• Opis fizyczny: Bibliogr. 21 poz., rys., tab.

Twórcy

autor

Dychalska A.

• Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

autor

Fabisiak K.

• Institute of Physics, Kazimierz Wielki University, Powsta´nc´ow Wielkopolskich 2, 85-090 Bydgoszcz, Poland

autor

Paprocki K.

• Institute of Physics, Kazimierz Wielki University, Powsta´nc´ow Wielkopolskich 2, 85-090 Bydgoszcz, Poland

autor

Dudkowiak A.

• Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

autor

Szybowicz M.

• Faculty of Technical Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

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