(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

• Autorzy: Guo D. , Ju Y. , Fu C. , Huang Z. , Zhang L.
• Języki publikacji: EN

Abstrakty

EN

Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0) substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2) preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylamino)ethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2)-oriented ZnO thin films were formed by adjusting the baking temperature.

Słowa kluczowe

EN

ZnO thin film; sol-gel method; boiling; temperature; orientation; morphology

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 3
• Strony: 555--563
• Opis fizyczny: Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Guo D.

• Department of Mechanical Science and Engineering, Nagoya University, Nagoya 464-8603, Japan

autor

Ju Y.

• Department of Mechanical Science and Engineering, Nagoya University, Nagoya 464-8603, Japan

autor

Fu C.

• School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

autor

Huang Z.

• School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

autor

Zhang L.

• School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Bibliografia

• 1. Ozgur U., Alivov Y.I., Liu C, Teke A., Reshchikov M.A., Dogan S., Avrutin V., Cho S.J., Morkoc H., J. Appl. Phys., 98 (2005), 041301.
• 2. Klingshirn C., ChemPhysChem, 8 (2007), 782.
• 3. Wang Z.L., J. Phys.-Condens. Mat., 16 (2004), R829.
• 4. Ohji K., Toha T., Wasa K., Hayakawa S., J. Appl. Phys., 47 (1976), 1726.
• 5. Ellmer K., J. Phys. D Appl. Phys., 34 (2001), 3097.
• 6. Hilgendorff M., Spanhel L., Rothen-Hausler C., Muller G., J. Electrochem. Soc., 145 (1998), 3632.
• 7. Hau S.K., Yip H.L., Baek N.S., Zou J., O’Malley K., Appl. Phys. Lett., 92 (2008), 253301.
• 8. Jin B.J., Im S., Lee S.Y., Thin Solid Films, 366 (2000), 107.
• 9. Mirica E., Kowach G., Evans P., Du H., Cryst. Growth Des., 4 (2004), 147.
• 10. Shin K.S., Park H.J., Kumar B., Kim K.K., Ihn S.G., Kim S.W., J. Mater. Chem., 21 (2011), 12274.
• 11. Govender K., Boyle D.S., Kenway P.B., O’Brien P., J. Mater. Chem., 14 (2014), 2575.
• 12. Hu X., Masuda Y., Ohji T., Kato K., Thin Solid Films, 518 (2009), 638.
• 13. Podlogar M., Richardson J.J., Vengust D., Daneu N., Samardzija Z., Bernik S., Recnik A., Adv. Funct. Mater., 22 (2012), 1.
• 14. Ohyama M., Kozuka H., Yoko T., Thin Solid Films, 306 (1997), 78.
• 15. Ohyama M., Kozuka H., Yoko T., Sakka S., Jpn. J. Ceram. Soc., 104 (1996), 296.
• 16. Guo D., Sato K., Hibino S., Takeuchi T., Bessho H., Kato K., J. Mater. Sci., 49 (2014), 4722.
• 17. Lee J.H., Ko K.H., Park B.O., J. Cryst. Growth, 247 (2003), 119.
• 18. Guo D., Sato K., Hibino S., Takeuchi T., Bessho H., Kato K., Thin Solid Films, 550 (2014), 250.
• 19. Santos A.M.P., Santos E.J.P., Thin Solid Films, 516 (2008), 6210.
• 20. Segawa H., Sakurai H., Izumi R., Hayashi T., Yano T., Shibata S., J. Mater. Sci., 46 (2011), 3537.
• 21. Maiti U.N., Ghosh P.K., Nandy S., Chattopad-Hyay K.K., Physica B, 387 (2007), 103.
• 22. Hou Y., Soleimanpour A.M., Jayatissa A.H., Sensor. Actuat. B-Chem., 177 (2013), 761.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.