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Design of a nanoswitch in 130 nm CMOS technology for 2.4 GHz wireless terminals

Treść / Zawartość
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This paper proposes a transmit/receive (T/R) nanoswitch in 130 nm CMOS technology for 2.4 GHz ISM band transceivers. It exhibits 1.03-dB insertion loss, 27.57-dB isolation and a power handling capacity (P1 dB) of 36.2-dBm. It dissipates only 6.87 μW power for 1.8/0 V control voltages and is capable of switching in 416.61 ps. Besides insertion loss and isolation of the nanoswitch is found to vary by 0.1 dB and 0.9 dB, respectively for a temperature change of 125°C. Only the transistor W/L optimization and resistive body floating technique is used for such lucrative performances. Besides absence of bulky inductors and capacitors in the schematic circuit help to attain the smallest chip area of 0.0071 mm2 which is the lowest ever reported in this frequency band. Therefore, simplicity and low chip area of the circuit trim down the cost of fabrication without compromising the performance issue.
Słowa kluczowe
Rocznik
Strony
399--406
Opis fizyczny
Bibliogr. 16 poz., tab., wykr., rys.
Twórcy
  • Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
  • Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
autor
  • Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
autor
  • Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
Bibliografia
  • [1] H. Elwan, A. Tekin, and K. Pedrotti, “A differential-ramp based 65 dB-linear VGA technique in 65 nm CMOS”, IEEE J. Solid-State Circuits 44 (9), 2503–2514 (2009).
  • [2] I. Jones, L. Ricciardi, L. Hall, H. Hansen, V. Varadan, C. Bertram, S. Maddocks, S. Enderling, D. Saint, S.A. Sawari, and D. Abbott, “Wireless RF communication in biomedical applications”, Smart Materials and Structures 17, 1–10 (2008).
  • [3] M.J. Uddin, M.I. Ibrahimy, M.B.I. Reaz, and A.N. Nordin, “Design and application of radio frequency identification systems”, Eur. J. Scientific Research 33 (3), 438–453 (2009).
  • [4] W.M. Kader, H. Rashid, M. Mamun, and M.A.S. Bhuiyan, “Advancement of CMOS Schmitt trigger circuits”, Modern Applied Science 6 (12), 51–58 (2012).
  • [5] A.A. Abidi, “RF CMOS comes of age”, IEEE J. Solid-State Circuits 39 (4), 549–561 (2004).
  • [6] M.J. Uddin, A.N. Nordin, M.B.I. Reaz, and M.A.S. Bhuiyan, “A CMOS power splitter for 2.45 GHz ISM band RFID reader in 0.18 μm CMOS technology”, Technical Gazette 20 (1), 125-129 (2013).
  • [7] X.J. Li and Y.P. Zhang, “Flipping the CMOS switch”, IEEE Microwave Magazine 11 (1), 86–96 (2010).
  • [8] K. Yamamoto, K. Heima, A. Furukawa, M. Ono, Y. Hashizume, H. Komurasaki, S. Maeda, H. Sato, and N. Kato, “A 2.4-GHz-band 1.8-V operation single-chip Si- CMOS T/R-MMIC front-end with a low insertion loss switch”, IEEE J. Solid-State Circuits 36 (8), 1186–1197 (2001).
  • [9] F.J. Huang, “A 2.4-GHz single-pole double-throw T/R switch with 0.8-dB insertion loss implemented in a CMOS process”, Proc. 27th Eur. Solid-State Circuits Conf. (ESSCIRC) 1, 417–420 (2001).
  • [10] F.J. Huang, “Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates”, IEEE J. Solid-State Circuits 39 (1), 35–41 (2004).
  • [11] C. Hove, J.L. Faaborg, M.B. Jenner, and S. Lindfors, “0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications”, Analog Integrated Circuits and Signal Processing 38 (1), 35–42 (2004).
  • [12] M.C. Yeh, Z.M. Tsai, R.C. Liu, K.Y. Lin, Y.T. Chang, and H. Wang, “Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance”, IEEE Trans. on Microwave Theory and Techniques 54 (1), 31–39 (2006).
  • [13] C. Tinella, J.M. Fournier, D. Belot, and V. Knopik, “A highperformance CMOS-SOI antenna switch for the 2.5-5-GHz band”, IEEE J. Solid-State Circuits 38 (7), 1279 -1283 (2003).
  • [14] Y.H. Lin, C.H. Chu, D.C. Chang, J. Gong, and Y.Z. Juang, “A 900-MHz 30-dbm bulk Cmos transmit/receive switch using stacking architecture, high substrate isolation and RF floated body”, Progress in Electromagnetics Research C 11, 91–107 (2009).
  • [15] Y.P. Zhang, Q. Li, W. Fan, C.H. Ang, and H. Li, “A differential CMOS T/R switch for multistandard applications”, IEEE Trans.on Circuits and Systems II: Express Briefs 53 (8), 782–786 (2006).
  • [16] P. Mekanand, P. Prawatrungruang, and D. Eungdamrong, “0.5 μ CMOS 2.4 GHz RF-switch for wireless communications”, Proc. 10th Int. Conf. on Advanced Communication Technology (ICACT) 1, 447–450 (2008).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-d924e403-999c-4bd7-b2e3-f50ca0a94f32
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