Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO₂/HfO₂ Bilayer Devices

• Autorzy: Cho Min Gyoo , Go Jae Hee , Choi Byung Joon

Identyfikatory

DOI

10.24425/amm.2024.149767

• Języki publikacji: EN

Abstrakty

EN

Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO₂ and TiO₂ were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO₂ and TiO₂ and TiO₂/HfO₂ sandwiched between Pt and Tin electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO₂/HfO₂ stack was due to the difference in height and the number of energy barriers.

Słowa kluczowe

EN

atomic layer deposition; bilayer; self-rectifying memory; rectification ratio

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2024
• Tom: Vol. 69, iss. 2
• Strony: 463--466
• Opis fizyczny: Bibliogr. 17 poz., rys.

Twórcy

autor

Cho Min Gyoo

• Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea

• https://orcid.org/0009-0003-3742-0164

autor

Go Jae Hee

• Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea

autor

Choi Byung Joon

• Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Korea

• https://orcid.org/0000-0003-1920-8162

Bibliografia

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Uwagi

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Grant No. 2022M3F3A2A01044952).