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Fabrication and characterization of compositionally graded Bi1−x Gd x FeO3 thin films

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
An undoped BiFeO3 thin film, Gd doped Bi0.95Gd0.05FeO3 thin film with a constant composition, Gd up-graded doped Bi1−x Gd x FeO3 and Gd down-graded doped Bi1−x Gd x FeO3 thin films were successfully grown on Pt (111)/Ti/SiO2/Si (100) substrates using a sol-gel and spin coating technique. The crystal structure, ferroelectric and dielectric characteristics as well as the leakage currents of these samples were thoroughly investigated. The XRD (X-Ray Diffraction) patterns indicate that all these thin films consist of solely perovskite phase with polycrystalline structure. No other secondary phases have been detected. Clear polarization-electric field (P-E) hysteresis loops of all these thin films demonstrate that the incorporation of Gd3+ into the Bi site of BFO thin film have enhanced the ferroelectric performance of pure BiFeO3 thin film, and the Gd down-graded doped Bi1−x Gd x FeO3 thin film has the best ferroelectric properties. Compared to other thin films, the optimal ferroelectric behavior of the Gd down-graded doped Bi1−x Gd x FeO3 thin film results from its large dielectric constant, low dissipation factor and low leakage current.
Wydawca
Rocznik
Strony
498--502
Opis fizyczny
Bibliogr. 17 poz., tab., wykr.
Twórcy
autor
  • College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China
autor
  • College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China
autor
  • College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China
autor
  • College of Materials Science and Engineering, Nanjing University of Technology, No. 5 Xinmofan Road, Nanjing 210009, China
Bibliografia
  • [1] HILL N.A., J. Phys. Chem. B, 104 (2000), 6694.
  • [2] FIEBIG M, LOTTERMOSER T., FR¨OHLICH D., GOLTSEV A.V., PISAREV R.V., Nature, 419 (2002), 818.
  • [3] EERENSTEIN W, MATHUR N.D., SCOTT J.F., Nature, 442 (2006), 759.
  • [4] QI X.D., DHO J., TOMOV R., BLAMIRE M.G., MACMANUS-DRISCOLL J.L., Appl. Phys. Lett., 86 (2005), 062903.
  • [5] WANG Y.P., ZHOU L., ZHANG M.F., CHEN X.Y., LIU J.M., LIU Z.G., Appl. Phys. Lett., 84 (2004), 1731.
  • [6] PABST G.W., MARTIN L.W., YING-HAO C., RAMESH R., Appl. Phys. Lett., 90 (2007), 072902.
  • [7] SINGH S.K., ISHIWARA H., MARUYAMA K., Appl. Phys. Lett., 88 (2006), 262908.
  • [8] KAWAE T., TERAUCHI Y., TSUDA H., KUMEDA M., MORIMOTO A., Appl. Phys. Lett., 94 (2009), 112904.
  • [9] CHENG Z.X., WANG X.L., DOU S.X., Phys. Rev. B, 77 (2008), 092101.
  • [10] PRADHAN S.K., DAS J., ROUT P.P., DAS S.K., MISHRA D.K., SAHU D.R., PRADHAN A.K., SRINIVASU V.V., NAYAK B.B., VERMA S., ROUL B.K., J. Magn. Magn. Mater., 322 (2010), 3614.
  • [11] PRADHAN S.K., ROUL B.K., J. Phys. Chem. Solids, 72 (2011), 1180.
  • [12] PRADHAN S.K., DAS J., ROUT P.P., DAS S.K., SAMANTRAY S., MISHRA D.K., SAHU D.R., PRADHAN A.K., ZHANG K., SRINIVASU V.V., ROUL B.K., J. Alloy. Compd., 509 (2011), 2645.
  • [13] YUAN G.L., OR S.W., WANG Y.P., LIU Z.G., LIU J.M., Solid State Commun., 138 (2006), 76.
  • [14] CARVALO T.T., TAVARES P.B., Mater. Lett., 62 (2008), 3984.
  • [15] KLUG M.P., ALEXANDER L.E., X-ray Diffraction Procedure for Polycrystalline and Amorphous Materials, Wiley, New York, 1974, p. 634.
  • [16] OKATAN M.B., MANTESE J.V., ALPAY S.P., Acta Mater., 58 (2010), 39.
  • [17] YUN K.Y., NODA M., OKUYAMA M., SAEKI H., TABATA H., SAITO K., J. Appl. Phys., 96 (2004), 3399.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-d7d164bc-c703-4f9f-8e32-46503dcc4b9c
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