Growth Temperature Effect of Atomic-Layer-Deposited GdOx Films

• Autorzy: Ryu Sung Yeon , Yun Hee Ju , Lee Min Hwan , Choi Byung Joon

Identyfikatory

DOI

10.24425/amm.2021.136375

• Języki publikacji: EN

Abstrakty

EN

Gadolinium oxide (Gd₂O₃) is one of the lanthanide rare-earth oxides, which has been extensively studied due to its versatile functionalities, such as a high permittivity, reactivity with moisture, and ionic conductivity, etc. In this work, GdO_x thin film was grown by atomic layer deposition using cyclopentadienyl (Cp)-based Gd precursor and water. As-grown GdO_x film was amorphous and had a sub-stoichiometric (x ~ 1.2) composition with a uniform elemental depth profile. ~3 nm-thick GdO_x thin film could modify the hydrophilic Si substrate into hydrophobic surface with water wetting angle of 70°. Wetting and electrical test revealed that the growth temperature affects the hydrophobicity and electrical strength of the as-grown GdO_x film.

Słowa kluczowe

EN

gadolinium oxide; Gd2O3; rare-earth oxide; atomic layer deposition; hydrophobicity; electrical property

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2021
• Tom: Vol. 66, iss. 3
• Strony: 755--758
• Opis fizyczny: Bibliogr. 14 poz., rys., wykr.

Twórcy

autor

Ryu Sung Yeon

• Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

autor

Yun Hee Ju

• Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

autor

Lee Min Hwan

• University of California Merced, Department of Mechanical Engineering, Merced, California, USA

autor

Choi Byung Joon

• Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

• https://orcid.org/0000-0003-1920-8162

Bibliografia

• [1] C. Wiemer, L. Lamagna, M. Fanciulli, Semiconductor Science and Technology 27, 074013 (2012).
• [2] A. Karimaghaloo, J. Koo, H. sen Kang, S. A. Song, J. H. Shim, M. H. Lee, International Journal of Precision Engineering and Manufacturing - Green Technology 6, 611 (2019).
• [3] G. Azimi, R. Dhiman, H. M. Kwon, A. T. Paxson, K. K. Varanasi, Nature Materials 12, 315 (2013).
• [4] I. K. Oh, K. Kim, Z. Lee, K. Y. Ko, C. W. Lee, S. J. Lee, J. M. Myung, C. Lansalot-Matras, W. Noh, C. Dussarrat, H. Kim, H. B. R. Lee, Chemistry of Materials 27, 148 (2015).
• [5] M. Leskelä, K. Kukli, M. Ritala, Journal of Alloys and Compounds 418, 27 (2006).
• [6] J. H. Han, A. Delabie, A. Franquet, T. Conard, S. van Elshocht, C. Adelmann, Chemical Vapor Deposition 21, 352 (2015).
• [7] S. Govindarajan, T. S. Böscke, P. Sivasubramani, P. D. Kirsch, B. H. Lee, H. H. Tseng, R. Jammy, U. Schröder, S. Ramanathan, B. E. Gnade, Applied Physics Letters 91, 062906 (2007).
• [8] H. Kim, H. J. Yun, B. J. Choi, RSC Advances 8, 42390 (2018).
• [9] J. H. Shim, G. D. Han, H. J. Choi, Y. Kim, S. Xu, J. An, Y. B. Kim, T. Graf, T. D. Schladt, T. M. Gür, F. B. Prinz, International Journal of Precision Engineering and Manufacturing - Green Technology 6, 629 (2019).
• [10] K. Xu, R. Ranjith, A. Laha, H. Parala, A. P. Milanov, R. A. Fischer, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H. J. Osten, U. Kunze, A. Devi, Chemistry of Materials 24, 651 (2012).
• [11] C. Adelmann, H. Tielens, D. Dewulf, A. Hardy, D. Pierreux, J. Swerts, E. Rosseel, X. Shi, M. K. van Bael, J. A. Kittl, S. van Elshocht, Journal of The Electrochemical Society 157, G105 (2010).
• [12] D. Kim, D. Ha Kim, D. H. Riu, B.J. Choi, Archives of Metallurgy and Materials 63, 1061 (2018).
• [13] M. Mishra, P. Kuppusami, S. Ramya, V. Ganesan, A. Singh, R. Thirumurugesan, E. Mohandas, Surface and Coatings Technology 262, 56 (2015).
• [14] N. K. Sahoo, M. Senthilkumar, S. Thakur, D. Bhattacharyya, Applied Surface Science 200, 219 (2002).

Uwagi

1. This study was financially supported by Seoul National University of Science & Technology

2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).