Measurements of transient thermal impedance of SiC BJT

• Autorzy: Szelągowska Joanna , Bisewski Damian , Zarębski Janusz

Identyfikatory

DOI

10.15199/48.2020.02.42

Warianty tytułu

PL

Pomiary przejściowej impedancji termicznej tranzystora SiC BJT

• Języki publikacji: EN

Abstrakty

EN

The paper presents the computer-aided method of measuring of the transient thermal impedance of SiC BJTs. The advantages of this method are illustrated by means of measurements of the silicon carbide BJT operating at the different cooling conditions.

PL

W pracy przedstawiono komputerową metodę pomiaru przejściowej impedancji termicznej tranzystora SiC BJT. Zalety tego sposobu zilustrowano za pomocą pomiarów tranzystora SiC BJT pracującego w różnych warunkach chłodzenia.

Słowa kluczowe

EN

BJT; transient thermal impedance; thermal resistance; silicon carbide

PL

przejściowa impedancja termiczna; tranzystor bipolarny; rezystancja termiczna; węglik krzemu

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2020
• Tom: R. 96, nr 2
• Strony: 178--181
• Opis fizyczny: Bibliogr. 30 poz., rys., tab.

Twórcy

autor

Szelągowska Joanna

• Gdynia Maritime University, Department of Marine Electronics, 83 Morska Str., 81225 Gdynia

autor

Bisewski Damian

• Gdynia Maritime University, Department of Marine Electronics, 83 Morska Str., 81225 Gdynia

autor

Zarębski Janusz

• Gdynia Maritime University, Department of Marine Electronics, 83 Morska Str., 81225 Gdynia

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).