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Konferencja
Computer Applications in Electrical Engineering (20-21.04.2015 ; Poznań, Polska)
Języki publikacji
Abstrakty
In this paper a computer aided design of snubber circuit for DC\DC converter is presented. Due to the presence of parasitic LC circuit in the power stage (inductance and capacitance), it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Three types of snubber circuits (C, RC, RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation result. It confirm the proper choice of snubber circuit.
Słowa kluczowe
Rocznik
Tom
Strony
77--83
Opis fizyczny
Bibliogr. 7 poz., rys., tab.
Twórcy
autor
- Nicolaus Copernicus University, Toruń
autor
- Nicolaus Copernicus University, Toruń
autor
- Nicolaus Copernicus University, Toruń
autor
- Warsaw University of Technology
Bibliografia
- [1] Zdanowski M., Rąbkowski J., Barlik R., Transformers. High frequency DC/DC converter with Silicon Carbide devices - simulation analysis, Przegląd Elektrotechniczny, nr 2/2014, 2014, p. 201-204 (in Polish).
- [2] Singh R., Richmond J., SiC power schottky diodes in power – factor correction circuits, CREE inc. www.cree.com/power.
- [3] Peng F.Z., Su G-J., Tolbert L.M., A passive soft-switching Snubber for PWM inverters, IEEE Transactions on Power Electronics, Volume 19, Number 2, 2004, p. 363-370.
- [4] Jain P.K., Kang W., Soin H., Xi Y., Analysis and design considerations of a load and line independent zero voltage switching full bridge DC/DC converter topology, IEEE Transactions on Power Electronics, Volume 17, Number 5, 2002, p. 649-657.
- [5] Todd P.C., Snubber circuits: theory, design and applications, Unitrode-Power Supply Design Seminar, 1993.
- [6] C2M0080120D SiC N-channel MOSFET datasheet, Rev. B, www.cree.com
- [7] C4D10120A SiC schottky diode datasheet, Rev. B, www.cree.com
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-d69f8429-c35c-4d6c-b88c-cb273333e1e9