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Abstrakty
Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under illumination. Conversion efficiencies of the CuO/n-Si solar cells are comparable to those of CuO/n-Si produced by other methods described in the literature.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
668--674
Opis fizyczny
Bibliogr. 21 poz., rys., tab.
Twórcy
autor
- Department of Physics, Institute of Science and Technology, Van Yuzuncu Yil University, 65080 Van, Turkey
autor
- Department of Physics, Faculty of Science, Van Yuzuncu Yil University, 65080 Van, Turkey
autor
- Department of Physics, Faculty of Science, Van Yuzuncu Yil University, 65080 Van, Turkey
autor
- Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol, Turkey
autor
- Department of Physics, Faculty of Sciences and Arts, Bingöl University, 12000 Bingöl, Turkey
Bibliografia
- [1] Masudy-Panah S., Dalapati G.K., Radhakrishnan K., Kumar A., Tan H.R., J. Appl. Phys., 116 (2014), 074501-1.
- [2] Masudy-Panah S., Dalapati G.K., Radhakrishnan K., Kumar A., Tan H.R., Kumar E.N., Vijila C., Tan C.C., Chi D.Z., Prog. Photovoltaics, 23 (2015), 637.
- [3] Masudy-Panah S., Radhakrishnan K., Tan H.R., Yi R., Wong T.I., Dalapati G.K., Sol. Energ. Mat. Sol. C., 140 (2015), 266.
- [4] Masudy-Panah S., Kakran M., Lim Y.-F., Chua C.S., Tan H.R., Dalapati G.K., J. Renew. Sustain. Ener., 8 (2016), 043507-7.
- [5] Gao F., Liu X-J., Zhang J-S., Song M-Z., Li N., J. Appl. Phys., 111 (2012), 084507-1.
- [6] Jayathilaka C., Kapaklis V., Siripala W., Jayanetti S., Appl. Phys. Express, 8 (2015), 065503-1.
- [7] Minami T., Miyata T., Nishi Y., Thin Solid Films, 559 (2014), 105.
- [8] Minami T., Miyata T., Nishi Y., Sol. Energy, 105 (2014), 206.
- [9] Razykov T.M., Ferekides C.S., Morel D., Stefanakos E., Ullal H.S., Upadhyaya H.M., Sol. Energy, 85, (2011), 1580.
- [10] Thobor A., Pierson J.F., Mater. Lett., 57 (2003), 3676.
- [11] Pierson J.F., Thobor A., Billard A., Appl. Surf. Sci., 210 (2003), 359.
- [12] Özer N., Tepehan F., Sol. Energ. Mat. Sol. C., 30 (1993), 13.
- [13] Al-KuhailiM. F., Vacuum, 82 (2008), 623.
- [14] Lee, H.-N., Song, B.-J., Mol. Cryst. Liq. Cryst., 564 (2012), 198.
- [15] Ziel A., Solid State Physical Electronics, 2nd ed., Prentice-Hall, New Jersey, 1968.
- [16] Sze S.M., Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981.
- [17] Rhoderick E.H., Williams R.H., Metal-Semiconductor Contacts, Clarendon Press, Oxford, 1988.
- [18] Neamen D.A., Semiconductor Physics and Devices: Basic Principles, Mc Graw Hill, New York, 1992.
- [19] Ozkartal A., Temirci C., Sol. Energy, 132 (2016), 96.
- [20] Masudy-Panah S., Moakhar R.S., Chua C.S., Kushwaha A., Wong T.I., Dalapati G.K., RSC Adv., 6 (2016), 29383.
- [21] Fonash, S.J., Solar Cell Device Physics, 2nd ed., Elsevier, Burlington, MA 01803, USA, 2010.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-d692dff2-f673-499e-9724-da0050512bde