Synthesis and characteristics of optical properties of crystalline YAl₃(BO₃)₄:Cr,Ce

• Autorzy: Cieślik I. , Żmija J. , Majchrowski A. , Pępczyńska M. , Morawiak P. , Włodarski M.
• Języki publikacji: EN

Abstrakty

EN

Purpose: The purpose of this study is to explore the possibility of conrol the grain size of YAB nanopowder and to investigate the optimum amount of dopant cerium or chromium ions in the matrix of YAB for luminescent intensity. Design/methodology/approach: Nanocrystalline samples of YAB were prepared by sol-gel method and calcination at 1273 K. The structure and morphology of nanopowders were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and aerodynamic aerosol aerodynamic methods. Fluorescent intensity was measured by Fourier transform infrared (FTIR) and intersection of three-dimensional matrix (EM-EX) methods. Findings: It was confirmed that the mean size of the obtained particles depended on the chain length of the precursor polimer used for reaction. The luminescence of YAB doped with cerium and chromium ions was measured. Research limitations/implications: The results can be used in order to further develop sol-gel technology to obtain pure and doped YAB nanopowder. Originality/value: Single phase crystalline YAB synthesis was developed. The measurements XRD confirmed that doping of YAB with some of RE or TM ions favours the formation of additional phase YBO₃, having the orgonic structure.

Słowa kluczowe

EN

sol-gel method; nanoparticles; fluorescence

• Wydawca: International OCSCO World Press
• Czasopismo: Journal of Achievements in Materials and Manufacturing Engineering
• Rocznik: 2011
• Tom: Vol. 48, nr 1
• Strony: 24--28
• Opis fizyczny: Bibliogr. 16 poz., rys.

Twórcy

autor

Cieślik I.

• Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

autor

Żmija J.

• Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

autor

Majchrowski A.

• Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

autor

Pępczyńska M.

• Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

autor

Morawiak P.

• Institute of Applied Physics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

autor

Włodarski M.

• Institute of Optoelectronics, Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland

Bibliografia

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