Disorder-induced natural quantum dots in InAs/GaAs nanostructures

• Autorzy: Babiński A.

Identyfikatory

DOI

10.1016/j.opelre.2018.02.001

• Języki publikacji: EN

Abstrakty

EN

Properties of excitons confined to potential fluctuations due to indium distribution in the wetting layer which accompany self-assembled InAs/GaAs quantum dots are reviewed. Spectroscopic studies are summarized including time-resolved photoluminescence and corresponding single-photon emission correlation measurements. The identification of charge states of excitons is presented which is based on results of a theoretical analysis of interactions between the involved carriers. The effect of the dots’ environment on their optical spectra is also shown.

Słowa kluczowe

EN

quantum dots; optical properties

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 1
• Strony: 73--79
• Opis fizyczny: Bibliogr. 40 poz., wykr.

Twórcy

autor

Babiński A.

• Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa, Poland

Bibliografia

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).