Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

• Autorzy: Liao Tsung-I , Chang Sheng-Po , Chang Shoou-Jinn

Identyfikatory

DOI

10.2478/msp-2025-0025

• Języki publikacji: EN

Abstrakty

EN

In this study, a 10 nm Al₂O₃ layer was deposited on the p-type gallium nitride (p-GaN) layer using thermal atomic layer deposition to form a metal–oxide–semiconductor high-electron mobility transistor (MOS-HEMT), designed to achieve lower gate leakage current. For comparison, a conventional p-GaN gate HEMT with an ohmic gate contact was employed. Transfer length method analysis of device resistance confirmed a reliable ohmic contact on the source/drain, with a low sheet resistance (R _sh) indicating a high-density two-dimensional electron gas in the access region, unaffected by the residual p-GaN etching process. To further explore the role of post-deposition annealing (PDA) in MOS-HEMTs, the characteristics of devices with and without PDA treatment were evaluated. Our conventional ohmic gate device exhibited excellent enhancement-mode (E-mode) characteristics, with all devices demonstrating low reverse gate leakage below 1 × 10^⁻6 mA/mm. Compared to ohmic-gate HEMTs, PDA-treated devices showed reduced gate leakage and improved reliability, achieving a 10-year lifetime at 7.2 V through time-dependent gate breakdown analysis, despite reduced ON-state performance. We analyzed the differences among the three devices based on their respective gate leakage currents.

Słowa kluczowe

EN

enhancement mode; p-GaN gate MOS-HEMT; transfer length method; post-deposition annealing

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2025
• Tom: Vol. 43, No. 2
• Strony: 143--152
• Opis fizyczny: Bibliogr. 32 poz., rys., tab.

Twórcy

autor

Liao Tsung-I

• Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung UniversityTainan City, Taiwan

autor

Chang Sheng-Po

• Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology Kaohsiung City 81157, Taiwan

autor

Chang Shoou-Jinn

• Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Tainan City, Taiwan

Bibliografia

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