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Języki publikacji
Abstrakty
Silicon as a raw material for solar cells can be produced by numerous methods. The carbothermic reduction of silica using electric arc furnace is the most widely used process in silicon industry. This paper presents a new approach to produce solar grade silicon using microwave furnace. Pellets of different sizes were prepared from a mixture of silica and carbon using water and polyvinyl alcohol as binder agents. Raman spectra indicated a peak at about 515 cm−1 attributed to silicon in the pellets prepared with polyvinyl alcohol, and peaks at about 523 cm−1 and 794 cm−1 attributed to silicon and silicon carbide, in the pellets prepared with water. The pellet size affects the absorption of microwave energy emitted from the magnetrons. Polyvinyl alcohol as a binder agent is promising for the production of silicon using microwave furnace.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
122--126
Opis fizyczny
Bibliogr. 22 poz., rys., tab.
Twórcy
autor
- Département de Technologie des Matériaux, Faculté de physique, Université des Sciences et 0de la Technologie d’Oran Mohamed Boudiaf, BP 1505 Oran (31000), Algérie
- Laboratoire de Microscopie Electronique et Sciences des Matériaux, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf, BP 1505 Oran (31000), Algérie
autor
- Département de Physique, Faculté Des Sciences, Université Saad Dahlab Blida1, BP 270 Blida (09000), Algérie
autor
- Laboratoire de Microscopie Electronique et Sciences des Matériaux, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf, BP 1505 Oran (31000), Algérie
- Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées, Cité 20 août 1956 Baba Hassen, Alger (16000), Algérie
autor
- Département de Technologie des Matériaux, Faculté de physique, Université des Sciences et 0de la Technologie d’Oran Mohamed Boudiaf, BP 1505 Oran (31000), Algérie
- Laboratoire de Microscopie Electronique et Sciences des Matériaux, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf, BP 1505 Oran (31000), Algérie
Bibliografia
- [1] BOUCETTA A., BENIOUB R., CHAHTOU A., HEDDADJ S.M., OGASAWARA T., FURUYA Y., ITAKA K., Mater. Trans., 57 (2016), 1936.
- [2] FILSINGER D.H., BOURRIE D.B., J. Am. Ceram. Soc., 73 (1990), 1726.
- [3] BENIOUB R., BOUCETTA A., CHAHTOU A., HEDDADJ S.M., ADNANE M., FURUYA Y., ITAKA K., Mater Trans., 57 (2016), 1930.
- [4] THOSTENSON E.T., CHOU T.W., Compos. Part A-Appl. S., 30 (1999), 1055.
- [5] MA S.J., ZHOU X.W., SU X.J., MO W., YANG J.L., LIU P., Miner. Eng., 22 (2009), 1154.
- [6] SUN J., WANG W., YUE Q., Materials, 9 (2016), 231.
- [7] GRANT E., HALSTEAD B. J., Chem. Soc. Rev., 27 (1998), 213.
- [8] CETINER S., SIRIN S., OLARIU M., SARAC A. S., Adv. Polym. Tech., 35 (2016).
- [9] METAXAS A.C., MEREDITH R.J., Industrial Microwave Heating, Peter Peregrinus Ltd., London, 1983.
- [10] HORIKOSHI S., SCHIFFMANN R.F., FUKUSHIMA J., SERPONE N., Materials Processing by Microwave Heating, in: Microwave Chemical and Materials Processing, Singapore, 2018, p. 321.
- [11] ELEKTROMAGNATIK S.B.P.G., Malays. J. Analy. Sci., 20 (2016), 444.
- [12] CLARK D.E., FOLZ D.C., WEST J.K., Mater. Sci. Eng. A-Struct., 287 (2000), 153.
- [13] KIM T., LEE J., LEE K.H., Carbon Lett., 15 (2014) 15.
- [14] BARBA A.A., AMORE M., Relevance of dielectric properties in microwave assisted processes, in: COSTANZO S. (Ed.), Microwave Materials Characterization, InTech, London, 2012, p. 91.
- [15] REZAII N., MAI J.P., Multiphysics Modelling of a Microwave Furnace for Efficient Silicon Production, COMSOL, Munich, 2016.
- [16] PIELSTICKER S., Simulationen zum Temperaturprofil im Reaktionsgemisch der carbothermischen Reduktion von Quarz im Mikrowellenofen, JPM Silicon GmbH, Germany, 2014.
- [17] SANTOS T., VALENTE M.A., MONTEIRO J., SOUSA J., COSTA L.C., Appl. Therm. Eng., 31 (2011), 3255.
- [18] BENIOUB R., ADNANE M., BOUCETTA A., CHAHTOU A., KOBATAKE H., FURUYA Y., ITAKA K., J. New. Tech. Mater., 7 (2017), 90.
- [19] ROMA G., Phys. Status. Solidi A, 213 (2016), 2995.
- [20] BARBOUCHE M., ZAGHOUANI R.B., BENAMMAR N.E., KHIROUNI K., EZZAOUIA H., Int. J. Adv. Manuf. Tech., 91 (2017), 1339.
- [21] WASYLUK J., PEROVA T.S., KUKUSHKIN S A., OSIPOV A.V., FEOKTISTOV N.A., GRUDINKIN S.A., Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6HSiC substrates, in: Materials Science Forum, Trans Tech Publications, Switzerland, 2010, p. 359.
- [22] DESCHAINES T., HODKIEWICZ J., HENSON P., in: Thermo Fisher Scientific, Madison, WI, USA, 2009.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-d3df5d96-a38a-4762-b82f-8146adfac86c