Structural, morphological and photoluminescent properties of Nd-coated silicon nanostructures

• Autorzy: Mefoued Amine , Mahmoudi Bedra , Benrekaa Nasser , Tiour Faiza , Menari Hamid , Naitbouda Abdelyamine , Manseri Amar , Brik Afaf , Mezghiche Salah , Debbab Moustafa

Identyfikatory

DOI

10.24425/opelre.2023.145096

• Języki publikacji: EN

Abstrakty

EN

The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd₂O₃) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd₂O₃ thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd₂O₃ and SiN phases present in the Nd₂O₃-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd₂O₃ thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025-1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.

Słowa kluczowe

EN

silicon nanostructures; silicon nitride; neodymium; SEM/EDS; SIMS; Raman spectroscopy; photoluminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, No. 1
• Strony: art. no. e145096
• Opis fizyczny: Bibliogr. 61 poz., rys., tab., wykr.

Twórcy

autor

Mefoued Amine

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger-7 merveilles, 16027 Algiers, Algeria
• Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria

• https://orcid.org/0000-0001-8434-4123

autor

Mahmoudi Bedra

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger-7 merveilles, 16027 Algiers, Algeria

autor

Benrekaa Nasser

• Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria

autor

Tiour Faiza

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria

autor

Menari Hamid

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria

autor

Naitbouda Abdelyamine

• Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956, 16081 Algiers, Algeria

autor

Manseri Amar

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger-7 merveilles, 16027 Algiers, Algeria

autor

Brik Afaf

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger-7 merveilles, 16027 Algiers, Algeria

autor

Mezghiche Salah

• Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger-7 merveilles, 16027 Algiers, Algeria

autor

Debbab Moustafa

• Université Abou Bekr Belkaid BP 230, 13000 Chetouane, Tlemcen, Algeria

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).