Department of Materials and Semiconductor Structures Research

• Autorzy: Czerwiński A.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2014
• Tom: z. 1/2
• Strony: 130--151
• Opis fizyczny: Bibliogr. 70 poz., il., wykr.

Twórcy

autor

Czerwiński A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• Publications’2013
• [P1] BĄK-MISIUK J., ROMANOWSKI P., DYNOWSKA E., SADOWSKI J., MISIUK A., CALIEBE W.:Variation of Strain in Granular GaAs:MnAs Layers. Crystallogr. Rep. 2013 vol. 58 no 7 p. 998-1001.
• [P2] BORYSIEWICZ M., BARANOWSKA-KORCZYC A., EKIELSKI M., WZOREK M., DYNOWSKA E.,WOJCIECHOWSKI T., KAMIŃSKA E., FRONC K., ELBAUM D., WOJTOWICZ T., PIOTROWSKA A.: Synthesis and Properties of Nanocoral ZnO Structures. Nanostructured Metal Oxide for Advanced Application. Symp. S. 2013 MRS Spring Meet. [In] Mat. Res. Soc. Symp. Proc. 2013 vol. 1552 p. 13-1552-s04.
• [P3] BORYSIEWICZ M., WZOREK M., WOJCIECHOWSKI T., KAMIŃSKA E., PIOTROWSKA A.: Photoluminescence of Nanocoral ZnO Films. J. of Lumin. (submit ro print).
• [P4] FEDORCZYK A., RATAJCZAK J., CZERWIŃSKI A., SKOMPSKA M.: Selective Deposition of Gold Nanoparticles on the Top or Inside a Thin Conducting Polymer Film, by Combination of Electroless Deposition and Electrochemical Reduction. Electrochim. Acta (submit. to print.).
• [P5] GOŁASZEWSKA-MALEC K., KRUSZKA R., MYŚLIWIEC M., EKIELSKI M., JUNG W., PIOTROWSKI T., JUCHNIEWICZ M., BAR J., WZOREK M., KAMIŃSKA E., PIOTROWSKA A., SARZAŁA R. P., DEMS M., WOJTAS J., MĘDRZYCKI R., PRYSTAWKO P.: GaN-Based Light Emitting Diodes with Surface Photonic Crystals. Elektronika 2013 vol. LIV no. 9 p. 46-49 (in Polish).
• [P6] GOŁASZEWSKA-MALEC K., KRUSZKA R., MYŚLIWIEC M., EKIELSKI M., JUNG W., PIOTROWSKI T., JUCHNIEWICZ M., BAR J., WZOREK M., KAMIŃSKA E., PIOTROWSKA A., SARZAŁA R. P., DEMS M., WOJTAS J., MĘDRZYCKI R., PRYSTAWKO P.: GaN-Based Light Emitting Diodes with Surface Photonic Crystals. Proc. of the XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013, p. 662-668 (in Polish).
• [P7] GUZIEWICZ M., ŁASZCZ A., DOMAGAŁA J., GOŁASZEWSKA-MALEC K., RATAJCZAK J., KRUSZKA R., JUCHNIEWICZ M., CZERWIŃSKI A., SŁYSZ W.: Structural Analysis of Epitaxial NbTiN Films. Electron Technology Conf. 2013 [in] Proc. of SPIE 2013 vol. 8902 p. 89022S-1-6.
• [P8] GUZIEWICZ M., ŁASZCZ A., DOMAGAŁA J., GOŁASZEWSKA-MALEC K., RATAJCZAK J., CZERWIŃSKI A., SŁYSZ W.: Structural Analysis of Epitaxial NbTiN Films. Proc. of the XI Sci. Conf. "Electron Technology". Ryn, Poland, 16-20.04.2013, p. 411-412 (in Polish).
• [P9] KAMIŃSKA I., OPALLO M., ŁASZCZ A., CZERWIŃSKI A., NIEDZIOLKA-JONSSON J.: (Bio)Electrocatalysis at Tin-Doped Indium Oxide Nanoparticle Film Decorated with Gold. Electrochim. Acta 2013 vol. 106 p. 165-171.
• [P10] KUCHUK A., KLADKO V. P., ADAMUS Z., WZOREK M., BORYSIEWICZ M., BOROWICZ P., BARCZ A., GOŁASZEWSKA-MALEC K., PIOTROWSKA A.: Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC. ISRN Electron. 2013 vol. 2013 p. I-5 ID 27165.
• [P11] LECAVELIER DES ETANGS-LEVALLOI A., CHEN Z., LESECQ M., LEPILLIET S., TAGRO Y., DANNEVILLE F., ROBILLARD J.-F., HOEL V., TROADEC D., GLORIA D., RAYNOD C., RATAJCZAK J., DUBOIS E.: A Coverging Route towards Very High Frequency, Mechanically Flexible, and Performance Stable Integrated Electronics. J. Appl. Phys. 2013 vol. 113 p. 153701-9.
• [P12] LECAVELIER DES ETANGS-LEVALLOI A., PHILIPPE J., LEPILLIET S., TAGRO Y., DANNEVILLE F., ROBILLARD J.-F., RAYNOD C., GLORIA D., RATAJCZAK J., DUBOIS E.: Invariance of DC and Characteristics of Mechanically Flexible CMOS Technology on Plastic. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Springer (submit. to print.).
• [P13] LIPIŃSKI M., PIOTROWSKI T., RATAJCZAK J., HEJDUK K., BIERSKA-PIECH B., JARZĄBEK B.: Investigation of Silicon Nanostructures for Photovoltaic Application. Elektronika 2013 vol. LIV no. 5 p. 27-29 (in Polish).
• [P14] LIPIŃSKI M., PIOTROWSKI T., RATAJCZAK J., HEJDUK K., BIERSKA-PIECH B., JARZĄBEK B.: Investigation of Silicon Nanostructures for Photovoltaic Application. Proc. of the XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013, p. 782-787 (in Polish).
• [P15] ŁASZCZ A., NOGALA W., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J.: Fabrication of Electrochemical Nano-Electrode Sensor Using Focused on Beam Technology. Polish J. of Chemic. Technol. (submit. to print.)
• [P16] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Heisenberg's Uncertainty and Human Brain. Neuroquantol. 2013 vol. 11 no. 1 p. 47-51.
• [P17] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Heavisde's Quantons as the Carriers of Extrasensory Perception Phenomena. Neuroquantol. 2013 vol. 11 no. 2 p. 209-222.
• [P18] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Brain and Cosmic Background Photons. Neuroquantol. 2013 vol. 11 no. 2 p. 223-226.
• [P19] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Langevin Twins and Brain Activity. Neuroquantol. (submit. to print.).
• [P20] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Thermal Resonances in the Attosecond Time Scale. Lasers in Eng. 2013 vol. 24 no. 1/2 p. 23-28.
• [P21] MISIUK A., BĄK-MISIUK J., PRUJSZCZYK M., ROMANOWSKI P.: Pressure-Assisted Generation of Thermal Donors in Doped Cz-Si. Prz. Elektrotech. 2013 vol. 89 no. 3b p. 261-263.
• [P22] PIOTROWSKI T., WĘGRZECKI M., CZERWIŃSKI A., TESLENKO G. I., MALYUTENKO O. YU., MALYUTENKO V. K.: Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band. Proc. of the Conf. Microtherm 2013. Microtechnol. a. Thermal Problems in Electron. (submit. to print.).
• [P23] ROMANOWSKI P., BĄK-MISIUK J., SOBCZAK K., DZIAWA P., DYNOWSKA E., SZCZEPAŃSKA A., MISIUK A.: Mn4Si7 Nanoinclusions in Mn-Implanted Si. Radiat. Phys. a. Chem. 2013 vol. 93 p. 67-71.
• [P24] SIERAKOWSKI A., KOPIEC D., EKWIŃSKA M., PIASECKI T., DOBROWOLSKI R., PŁUSKA M., DOMAŃSKI K., GRABIEC P., GOTSZALK T.: Dynamic Method of Calibration and Examination Piezoresistive Cantilevers. Electron Technology Conf. 2013 [in] Proc. of SPIE 2013 vol. 8902 p. 890220-1-8.
• [P25] SKWAREK A., KULAWIK J., CZERWIŃSKI A., PŁUSKA M., WITEK K.: Testing Method of Lead-Free Tin-Rich Alloys for Tin Pest Presence. J. of Mater. Sci. (submit. to print.).
• [P26] SZERLING A., KOSIEL K., KARBOWNIK P., WÓJCIK-JEDLIŃSKA A., PŁUSKA M.: Influence of Mesa-Fabrication-Dependent Waveguide-Sidewall Roughness on Threshold Current and Slope Efficiency of AlGaAs/GaAs Mid-Infrared Quantum-Cascade Lasers. Detection of Explosives and CBRN (Using Terahertz) (submit. to print.).
• [P27] SZERLING A., MACIEJEWSKA E., TRAJNEROWICZ A., KARBOWNIK P., KOSIEL K., HEJDUK K., WZOREK M.: Fabrication of Bragg Gratings For Single-Mode Quantum Cascade Lasers. Proc. of the XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013, p. 322-326 (in Polish).
• [P28] TAUBE A., GUTT T., GIERAŁTOWSKA S., ŁASZCZ A., WZOREK M., SOCHACKI M., KRÓL K., KAMIŃSKA E., PIOTROWSKA A.: Effect of SiO2 and Al2O3 Buffer Layer on the Properties of HfO2 Gate Dielectric Stacks on 4H-SiC. Proc. of the Conf. Microtherm 2013. Microtechnol. a. Thermal Problems in Electron. Lodz, Poland, 25-28.06.2013, p. 44.
• [P29] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., BORYSIEWICZ M., KUCHUK A., PIOTROWSKA A., KĄTCKI J.: Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS. Mater. Sci. Forum (submit. to print.).
• Conferences’2013
• [C1] BĄK-MISIUK J., ROMANOWSKI P., DYNOWSKA E., SADOWSKI J., MISIUK A., CALIEBE W.: The Influence of Annealing in Conditions of High Hydrostatic Pressure on the Stress of Thin Layers of Ga1-xMnxAs. 55 Crystallography. Wrocław, Poland, 27-28.06.2013 (poster, in Polish).
• [C2] BORYSIEWICZ M., BARANOWSKA-KORCZYC A., EKIELSKI M., WZOREK M., DYNOWSKA E., WOJCIECHOWSKI T., KAMIŃSKA E., FRONC K., ELBAUM D., WOJTOWICZ T., PIOTROWSKA A.: Synthesis and Properties of Nanocoral ZnO Structures. Mat. Res. Soc. Spring Meet. 1554. San Francisco, USA, 1-5.04.2013 (poster).
• [C3] BORYSIEWICZ M., BARANOWSKA-KORCZYC A., STRUK P., WZOREK M., KOLKOVSKY V., WOJCIECHOWSKI T., WIELGUS M., DYNOWSKA E., GOŁASZEWSKA-MALEC K., KAMIŃSKA E., BAR J., PUSTELNY T., FRONC K., ELBAUM D., WOJTOWICZ T., PIOTROWSKA A.: Nanocoral ZnO Growth and Physicochemical Properties. 42nd Int. School & Conf. on the Physics of Semiconductors "Jaszowiec 2013". Wisła, Poland, 22-27.06.2013 (paper).
• [C4] BORYSIEWICZ M., BARANOWSKA-KORCZYC A., WZOREK M., DYNOWSKA E., WOJCIECHOWSKI T., KAMIŃSKA E., FRONC K., ELBAUM D., WOJTOWICZ T., PIOTROWSKA A.: Reactive Sputter Deposited Nanocoral ZnO for Biosensors. 19 Int. Vacuum Congr. Paris, France, 8-14.09.2013 (poster).
• [C5] EKIELSKI M., BORYSIEWICZ M., WZOREK M., KAMIŃSKA E., WOJTOWICZ T., PIOTROWSKA A.: Selective Top-Down Fabrication of GaN Nanorods Using ICP Etching and a Sacrificial Mask. Mat. Res. Soc. Spring Meet. 1554. San Francisco, USA, 1-5.04.2013 (poster).
• [C6] GOŁASZEWSKA-MALEC K., KRUSZKA R., MYŚLIWIEC M., EKIELSKI M., JUNG W., PIOTROWSKI T., JUCHNIEWICZ M., BAR J., WZOREK M., KAMIŃSKA E., PIOTROWSKA A., SARZAŁA R.P., DEMS M., WOJTAS J., MĘDRZYCKI R., PRYSTAWKO P.: GaN-Based Light Emitting Diodes with Surface Photonic Crystals. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (paper, in Polish).
• [C7] GUZIEWICZ M., ŁASZCZ A., DOMAGAŁA J., GOŁASZEWSKA-MALEC K., RATAJCZAK J., CZERWIŃSKI A., SŁYSZ W.: Structural Analysis of Epitaxial NbTiN Films. XI Sci. Conf. "Electron Technology". Ryn, Poland, 16-20.04.2013 (poster, in Polish).
• [C8] GUZIEWICZ M., ŁASZCZ A., DOMAGAŁA J., GOŁASZEWSKA-MALEC K., CZERWIŃSKI A., SŁYSZ W.: Advantage of NbTiN over NbN in Superconducting Properties of Ultra-Thin Films. AVS 60th Int. Symp. a. Exh. Los Angeles/Long Beach, USA, 27.10.2013 (poster).
• [C9] KLIMOV A., PUZNIAK P., DZIAWA P., SŁYSZ W., GUZIEWICZ M., JUCHNIEWICZ M., BORYSIEWICZ M., KRUSZKA R., WĘGRZECKI M., ŁASZCZ A., CZERWIŃSKI A., SOBOLEWSKI R.: Superconductor/Ferromagnet NbN/NiCu and NbTiN/NiCu Bilayers for Nanostructured Single Photon Detectors. 8th Solid State Surfaces a. Interfaces. Smolenice, Czech Republic, 25-28.11.2013 (poster).
• [C10] KOSIEL K., SZERLING A., WÓJCIK-JEDLIŃSKA A., SANKOWSKA I., KUBACKA-TRACZYK J., SAKOWICZ M., PŁUSKA M., GOŁASZEWSKA-MALEC K., JAKIEŁA R., JUREŃCZYK J.: Epitaxy of AlGaAs/GaAs Structures for THz Quantum-Cascade Lasers. V Workshop on Physics a. Technology of Semiconductor Lasers. Krakow, Poland, 17-20.11.2013 (poster).
• [C11] LIPIŃSKI M., PIOTROWSKI T., RATAJCZAK J., HEJDUK K.: Investigation of Silicon Nanostructures for Photovoltaic Application. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (poster, in Polish).
• [C12] ŁASZCZ A., GUZIEWICZ M., SŁYSZ W., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J.: HRTEM Studies of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors. Microscopy Conf. Regensburg, Germany, 25-30.09.2013 (poster).
• [C13] ŁASZCZ A., NOGALA W., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J.: Fabrication of Electrochemical Nano-Electrode Sensor Using Focused on Beam Technology. VI Polish Conf. on Nanotechnology NANO 2013. Szczecin, Poland, 9-12.07.2013 (commun.).
• [C14] NIEDZIOLKA-JONSSON J., KAMIŃSKA I., ŁASZCZ A., CZERWIŃSKI A., OPALLO M.: Electrodeposition at a Three-Phase Junction for Electrocatalysis. The Fourteenth Int. Symp. on Electroanalytical Chemistry. Changchun, China, 17-20.08.2013 (poster).
• [C15] PAPIS-POLAKOWSKA E., KANIEWSKI J., JASIK A., JUREŃCZYK J., RZODKIEWICZ W., WZOREK M., SZADE J., WAWRO A., ORMAN Z.: Selected Aspects of the Fabrication of IR Detectors Based on Type II InAs/GaSb Superlattices. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (paper, in Polish).
• [C16] PAPIS-POLAKOWSKA E., KANIEWSKI J., JASIK A., SZADE J., RZODKIEWICZ W., WZOREK M., JUREŃCZYK J., WAWRO A., FENNER M. F.: Interface Properties of Type-II InAs/GaSb Superlattice Structures Third Sci. Symp. for Nanomeasurement Research NANOMEASURE 2013. Warsaw, Poland, 25-26.06.2013 (poster).
• [C17] PIOTROWSKI T., WĘGRZECKI M., CZERWIŃSKI A., TESLENKO G. I., MALYUTENKO O. YU., MALYUTENKO V. K.: Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band. Microtherm 2013 Microtechnology a. Thermal Problems in Electronics. Lodz, Poland, 25-28.06.2013 (paper).
• [C18] PŁUSKA M., CZERWIŃSKI A., SZERLING A., RATAJCZAK J., KĄTCKI J.: Effect of Secondary Electroluminescence on Cathodoluminescence and other Luminescence Measurements 15th Int. Conf. on Defects Recognition, Imaging and Physics in Semiconductors. Warsaw, Poland, 15-19.09.2013 (poster).
• [C19] ROMANOWSKI P., BĄK-MISIUK J., SOBCZAK K., JAKIEŁA R., MISIUK A.: The Influence of Mn4Si7 Inclusions Dimension on Silicon Matrix Strain State in Si:Mn. X Nation. Meet. of Synchrotron Radiation Users. Stalowa Wola, Poland, 9-11.09.2013 (poster).
• [C20] SIERAKOWSKI A., KOPIEC D., EKWIŃSKA M., PIASECKI T., DOBROWOLSKI R., PŁUSKA M., DOMAŃSKI K., GRABIEC P., GOTSZALK T.: Dynamic Method of Calibration and Examination Piezoresistive Cantilevers. XI Sci. Conf. "Electron Technology". Ryn, Poland, 16-20.04.2013 (poster).
• [C21] SIERAKOWSKI A., JANUS P., KOPIEC D., EKWIŃSKA M., PŁUSKA M., GRABIEC P., GOTSZALK T.: Piezoresistive Cantilever Working in a Shear Force Mode for in situ Characterization of Exposed Micro- and Nano-Structures". NanoScale 2013. Paris, France, 25-26.04.2013 (poster).
• [C22] SKWAREK A., KULAWIK J., CZERWIŃSKI A., PŁUSKA M., WITEK K.: Testing Method of Lead-Free Tin-Rich Alloys for Tin Pest Presence. XIV Int. Conf. on Intergranular and Interphase Boundaries in Materials. Halkidiki, Greece, 23-28.06.2013 (poster).
• [C23] SŁYSZ W., GUZIEWICZ M., GOŁASZEWSKA-MALEC K., DOMAGAŁA J., JUCHNIEWICZ M., BORYSIEWICZ M., KRUSZKA R., RATAJCZAK J., KOLKOVSKY V., BAR J., WĘGRZECKI M., PANAS A., WĘGRZECKA I., ŁASZCZ A., CZERWIŃSKI A., SOBOLEWSKI R.: NbTiN Superconducting Nanostructures with Ultrahigh Critical Current Densities for Single-Photon Detectors. SPIE Europe Optics a. Optoelectronics 2013. Prague, Czech Republic, 15-18.04.2013 (poster).
• [C24] SŁYSZ W., GUZIEWICZ M., KLIMOV A., PEPE G., PARLATO L., JUCHNIEWICZ M., BORYSIEWICZ M., KRUSZKA R., WĘGRZECKI M., ŁASZCZ A., CZERWIŃSKI A., SOBOLEWSKI R.: Proximitized NbN/NiCu and NbTiN/NiCu Superconductor/Ferromagnet Nano-Bilayers for Single Photon Detection. XVI Nation. Conf. of Superconductivity. Zakopane, Poland, 7-11.11.2013 (poster).
• [C25] SZERLING A., KARBOWNIK P., KOSIEL K., TRAJNEROWICZ A., MACIEJEWSKA E., GOŁASZEWSKA-MALEC K., ŁASZCZ A., WALCZAKOWSKI M., PAŁKA N.: Ultrathin Metallic Layers for IR-Emitters Technology. V Congr. of Polish Vacuum Soc. Krakow, Poland, 12-15.09.2013 (inv. lect.).
• [C26] SZERLING A., KOSIEL K., SAKOWICZ M., WÓJCIK-JEDLIŃSKA A., SANKOWSKA I., KUBACKA-TRACZYK J., TRAJNEROWICZ A., ŁASZCZ A., GOŁASZEWSKA-MALEC K., PŁUSKA M., JAKIEŁA R., WASILEWSKI Z.: Epitaxy and Device Fabrication for AlGaAs/GaAs THz Quantum-Cascade Lasers. Int. Conf. on THz and Mid Infrared Radiation and Applications to Cancer Detection Using Laser Imaging jointly with the Workgroup Meet. of COST ACTIONs MP1204 a. BM1205. Sheffield, Great Britain, 10-11.10.2013 (poster).
• [C27] SZERLING A., KOSIEL K., WASILEWSKI Z., SAKOWICZ M., TRAJNEROWICZ A., GOŁASZEWSKA-MALEC K., ŁASZCZ A., PŁUSKA M., WALCZAKOWSKI M., PAŁKA N.: Fabrication of Terahertz Quantum Cascade Laser. V Workshop on Physics a. Technology of Semiconductor Lasers. Krakow, Poland, 17-20.11.2013 (poster).
• [C28] SZERLING A., MACIEJEWSKA E., TRAJNEROWICZ A., KARBOWNIK P., KOSIEL K., HEJDUK K., WZOREK M.: Fabrication of Bragg Gratings For Single-Mode Quantum Cascade Lasers. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (poster, in Polish).
• [C29] TAUBE A., GUTT T., GIERAŁTOWSKA S., ŁASZCZ A., WZOREK M., SOCHACKI M., KRÓL K., KAMIŃSKA E., PIOTROWSKA A.: Effect of SiO2 and Al2O3 Buffer Layer on the Properties of HfO2 Gate Dielectric Stacks on 4H-SiC. Conf. Microtherm 2013. Microtechnol. a. Thermal Problems in Electron. Lodz, Poland, 25-28.06.2013 (paper).
• [C30] TRAJNEROWICZ A., PŁUSKA M., SZERLING A., KARBOWNIK P., KOSIEL K.: The Influence of Assembly Conditions on Mechanical and Electrical Properties of Contact Layers in Medium IR Lasers. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (poster, in Polish).
• [C31] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., BORYSIEWICZ M., KAMIŃSKA E., PIOTROWSKA A., KĄTCKI J.: TEM Characterization of Ti-Si-C Layers Deposited By Means Of High-Temperature Magnetron Sputtering. XII Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 10-13.06.2013 (poster, in Polish).
• [C32] WZOREK M., CZERWIŃSKI A., RATAJCZAK J., BORYSIEWICZ M., KUCHUK A., PIOTROWSKA A., KĄTCKI J.: Microstructure Characterization of Si/Ni Contact Layers on n-4H-SiC by TEM and XEDS. The Int. Conf. on Silicon Carbide and Related Materials. Miyazaki, Japan, 29.09-04.10.2013 (poster).
• Patents’2013
• [PA1] GRODECKI R., PIOTROWSKI T., PUŁTORAK J., WĘGRZECKI M.: Matrix of Sources of Modulated Infrared. Pat. no. P.385428 (in Polish).
• [PA2] GRODECKI R., JUNG W., PIOTROWSKI W., PUŁTORAK J., SIKORSKI S., WĘGRZECKI W: Source of Moulated Infrared Radiation and Matrix of Infrared-Radiation. Pat. no. P.385456 (in Polish).
• [PA3] PIOTROWSKI T.: Infrared Image Emitter. Pat. no. P.386063 (in Polish).
• [PA4] PIOTROWSKI T.: A Metod to Measure Carrier Lifetime and Device for Measurement of Carrier Lifetime. Pat. no. 215719 (in Polish).
• [PA5] PIOTROWSKI T.: Infrared Modulator and Matrix of Infrared Modulators. Pat. P.385994 (in Polish).
• [PA6] PIOTROWSKI T., ŚWIDERSKI J.: A Method to Simultaneously Measure the Uniformity and Recombination Parameters of a Semiconductor and Device for Such Measurements. Pat. no. P.388956 (in Polish).
• [PA7] PIOTROWSKI, WĘGRZECKI M.: Source of Modulated Thermal Radiation. Pat. no. P.385216 (in Polish).
• [PA8] PIOTROWSKI T.: A Cassette for Chemical Passivation of Multicrystalline Silicon Wafers. Utility model Ru. 66662 (in Polish).
• [PA9] ŁASZCZ A., NOGALA W., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J.: Biochemical-Electrode Nanosensor and Method of Manufacturing the Biochemical-Electrode Nanosensor. Pat. Appl. No P.404568 (in Polish).