Surface Contribution to GMR in Fe/Cr/Fe Films

• Autorzy: Warda K , Pereiro M , Wojtczak L , Baldomir D , Castro J , Arias J
• Języki publikacji: EN

Abstrakty

EN

Transport properties of very thin films have been analysed using the layered potentials calculated by means of the ab initio method represented by the density functional theory (DFT) in the planar geometry for the nFe/3Cr/nFe films, where n is the number of monoatomic Fe layers, (1 ≤ n ≤ 8). We also take into consideration the values of the relaxation time and the effective mass of an electron in terms of the considered potentials. The matching conditions have been applied at the interface and the boundary conditions at the surface in order to determine the contributions to the giant magnetoresistance (GMR) coming from the surface, interface, and inner layers. The surface roughness is introduced by means of the specularity factor Pσ defined in the spin-dependent terms responsible for the scattering of the electrons. Thus, the electron scattering at the outer surfaces depends on both spin orientations. The main result obtained in the paper is the evaluation that the surface contribution to GMR is very small in comparison with the effect of interface.

Słowa kluczowe

EN

multilayers; giant magnetoresistance; conductivity; thin films

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 1077--1082
• Opis fizyczny: Bibliogr. 8 poz., rys., tab., wykr.

Twórcy

autor

Warda K

• Univ. of Łódz, Solid State Physics Department, Pomorska 149/153, 92-236 Łódz, Poland

autor

Pereiro M

• Departamento de Física Aplicada, Universidade de Santiago de Compostela, Santiago de Compostela E-15782, Spain

autor

Wojtczak L

• Univ. of Łódz, Solid State Physics Department, Pomorska 149/153, 92-236 Łódz, Poland

autor

Baldomir D

• Departamento de Física Aplicada, Universidade de Santiago de Compostela, Santiago de Compostela E-15782, Spain
• Instituto de Investigacións Tecnolóxicas, Universidade de Santiago de Compostela, Santiago de Compostela E-15782, Spain

autor

Castro J

• Departamento de Física Aplicada, Universidade de Santiago de Compostela, Santiago de Compostela E-15782, Spain

autor

Arias J

• Instituto de Investigacións Tecnolóxicas, Universidade de Santiago de Compostela, Santiago de Compostela E-15782, Spain

Bibliografia

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