Silicon Carbide Fabrication by Infiltration of Molten Fe-Si Alloy Through Two-Step Reaction Sintering

• Autorzy: Hanada Yoshitsugu , Xiao Yang , Sonoda Akio , Kang Hyo-Gyoung , Nagayoshi Hideaki , Yamamoto Atsuo , Tokunaga Tatsuya

Identyfikatory

DOI

10.24425/amm.2019.130139

• Języki publikacji: EN

Abstrakty

EN

Wider application of silicon carbide (SiC) is anticipated for increasing the durability of various structural facilities. For this study, SiC was fabricated with decreased electrical resistivity for precision electrical discharge machining. Two-step reaction sintering by infiltration of molten Fe-Si alloy was applied for SiC fabrication. The procedure included first sintering at 973 K in Ar gas atmosphere and second sintering by spontaneous infiltration of molten Fe-75%Si alloy at 1693 K in vacuum. The sintered structure porosity became very low, forming 3C-type SiC. Results confirmed that molten Fe-75%Si alloy infiltration occurred because of reaction sintering. The electrical resistivity of the sintered SiC infiltrated by molten Fe-75%Si alloy can be improved to be two orders of magnitude lower than that by molten Si, consequently maintaining the high performance of SiC.

Słowa kluczowe

EN

electrical resistivity; fracture toughness; iron silicide; molten metal infiltration; silicon carbide

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2019
• Tom: Vol. 64, iss. 4
• Strony: 1645--1652
• Opis fizyczny: Bibliogr. 24 poz., fot., rys., tab., wzory

Twórcy

autor

Hanada Yoshitsugu

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Xiao Yang

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Sonoda Akio

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Kang Hyo-Gyoung

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Nagayoshi Hideaki

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Yamamoto Atsuo

• Fujico Co., Ltd., Kitakyushu, Japan

autor

Tokunaga Tatsuya

• Kyushu Institute of Technology, Faculty of Engineering, Kitakyushu, Japan

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