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For InGaN/AlGaN/GaN ultraviolet (λ = 365 nm) light emitting diodes, the S-shaped current-voltage characteristic was observed at liquid nitrogen temperature due to the transition from single injection (electrons) to double (electrons and holes) injection. Initially only electron injection into the active region takes place and as the current is increased, the injection of holes starts. It has been found that at the voltage of the minimum of the negative differential resistance region, oscillations of the current, accompanied by increasing electroluminescence intensity arise, and the repetition rate of the oscillations increases with the direct current rise. The intensity of the main ultraviolet and yellow electroluminescence bands sharply increases with increasing current at negative differential resistance region due to the rise of holes injection.
Słowa kluczowe
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Tom
Strony
125--133
Opis fizyczny
Bibliogr. 13 poz., rys.
Twórcy
autor
- V.Ye. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauki Avenue 41, 03028 Kyiv, Ukraine
autor
- V.Ye. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauki Avenue 41, 03028 Kyiv, Ukraine
autor
- V.Ye. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauki Avenue 41, 03028 Kyiv, Ukraine
autor
- Institute for Nuclear Research, National Academy of Sciences of Ukraine, Nauki Avenue 47, 03028 Kyiv, Ukraine
autor
- Institute for Nuclear Research, National Academy of Sciences of Ukraine, Nauki Avenue 47, 03028 Kyiv, Ukraine
autor
- Poltava National Technical Yuri Kondratyuk University, Pershotravnevyi Avenue 24, 36011 Poltava, Ukraine
autor
- Poltava National Technical Yuri Kondratyuk University, Pershotravnevyi Avenue 24, 36011 Poltava, Ukraine
autor
- Poltava National Technical Yuri Kondratyuk University, Pershotravnevyi Avenue 24, 36011 Poltava, Ukraine
Bibliografia
- [1] KNEISSL M., A brief review of III-nitride UV emitter technologies and their applications, [In] III-Nitride Ultraviolet Emitters: Technology and Applications, [Eds.] M. Kneissl, J. Rass, Chapter 1, Springer International Publishing, Switzerland 2016, pp. 1–25.
- [2] HONGWEI WANG, YUE LIN, LIHONG ZHU, YIJUN LU, YI TU, ZHUGUANG LIU, ZHONGHUA DENG, WENCHAO TANG, YULIN GAO, ZHONG CHEN, Temperature dependent carrier localization in AlGaInN near-ultraviolet light-emitting diodes, Optics Express 24(11), 2016, pp. 11594–11600, DOI: 10.1364/OE.24.011594.
- [3] SHAMIRZAEV V.T., GAISLER V.A., SHAMIRZAEV T.S., Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes, Semiconductors 50(11), 2016, pp. 1493–1498, DOI: 10.1134/ S1063782616110233.
- [4] POLYAKOV A.Y., JIN-HYEON YUN, USIKOV A.S., YAKIMOV E.B., SMIRNOV N.B., SHCHERBACHEV K.D., HELAVA H., MAKAROV Y.N., KURIN S.Y., SHMIDT N.M., RABINOVICH O.I., DIDENKO S.I., TARELKIN S.A., PAPCHENKO B.P., IN-HWAN LEE, Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy, Modern Electronic Materials 3(1), 2017, pp. 32–39, DOI: 10.1016/j.moem.2017.04.002.
- [5] HENINI M., RAZEGHI M., Optoelectronic Devices: III Nitrides, Elsevier Science, 2004.
- [6] RODICHKINA S.P., OSMINKINA L.A., ISAIEV M.V., PAVLIKOV A.V., ZOTEEV A.V., GEORGOBIANI V.A., GONCHAR K.A., VASILIEV A.N., TIMOSHENKO V.YU., Raman diagnostics of photoinduced heating of silicon nanowires prepared by metal-assisted chemical etching, Applied Physics B 121(3), 2015, pp. 337–344, DOI: 10.1007/s00340-015-6233-7.
- [7] KONOREVA O.V., LITOVCHENKO P.G., OPYLAT V.YA., PINKOVSKA M.B., TARTACHNYK V.P., Degradation-relaxation processes stimulated by structural defects in green gallium-phosphide light-emitting diodes, Ukrainian Journal of Physics 51(11–12), 2006, pp. 1119–1124.
- [8] VELESHCHUK V.P., VLASENKO O.I., LYASHENKO O.V., MYAGCHENKO YU.O., BAIDULLAEVA A., CHUPRYNA R.G., KRAVTSOV M.V., BUDOV O.D., Acoustic emission on the relaxation of local thermomechanical stresses in the process of degradation of light-emitting heterostructures on the basis of InGaN and GaAsP, Ukrainian Journal of Physics 53(3), 2008, pp. 239–245.
- [9] VLASENKO O.I., VELESCHUK V.P., KISSELUK M.P., LYASHENKO O.V., Changes in electrophysical characteristics of InGaN/GaN heterostructures of high power light-emitting diodes at increased current, Photoelectronics 20, 2011, pp. 33–39.
- [10] SHAMIRZAEV V.T., GAISLER V.A., SHAMIRZAEV T.S., Negative differential resistance in high-power InGaN/GaN laser diode, optoelectronics, Optoelectronics, Instrumentation and Data Processing 52(5), 2016, pp. 442–446, DOI: 10.3103/S8756699016050058.
- [11] KUZNETSOV N.I., IRVINE K.G., Current-voltage characteristics of GaN and AlGaN p-i-n diodes, Semiconductors 32(3), 1998, pp. 335–338, DOI: 10.1134/1.1187392.
- [12] MILNES А.G., Deep Impurities in Semiconductors, Willey Intersience Publication, 1977.
- [13] YANG J., ZHAO D.G., JIANG D.S., CHEN P., ZHU J.J., LIU Z.S., LE L.C., LI X.J., HE X.G., LIU J.P., ZHANG L.Q., YANG H., Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes, Journal of Vacuum Science and Technology B 34(1), 2016, article ID 011206, DOI: 10.1116/1.4937265.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-cf4601f7-6839-4455-85e2-43b43d25716b