Cost-effective titania layers over 100 nm thick : effect of annealing on the structural, morphological, and optical properties

• Autorzy: Zięba Magdalena , Tyszkiewicz Cuma , Gondek Ewa , Wojtasik Katarzyna , Nizioł Jacek , Dorosz Dominik , Starzyk Bartłomiej , Szymczak Patryk , Pakieła Wojciech , Rogoziński Roman , Karasiński Paweł

Identyfikatory

DOI

10.24425/opelre.2023.147913

• Języki publikacji: EN

Abstrakty

EN

Titania dioxide (TiO₂) layers were synthesized via the acid-catalysed sol-gel route using titania (IV) ethoxide, and then annealed at temperatures varying in the range of 150-700 °C. The research concerned the effect of annealing temperature on the structure of TiO₂ layers, their surface morphology, and their optical properties. Further, X-ray diffractometry, and Raman spectroscopy were used to determine the structure of TiO₂ layers. Scanning electron and atomic force microscopy were used to study the surface morphology of TiO₂ layers. Transmittance, reflectance, absorption edge, and optical homogeneity were investigated by UV-VIS spectrophotometry, while the refractive index and thicknesses of TiO₂ layers were measured using a monochromatic ellipsometer. Chromatic dispersion characteristics of the complex refractive index were determined using spectroscopic ellipsometry. Structural studies have shown that the TiO₂ layers annealed at temperatures up to 300 °C are amorphous, while those annealed at temperatures exceeding 300 °C are polycrystalline containing only anatase nanocrystals with sizes increasing from 6 to 20 nm with the increase of the annealing temperature. Investigations on the surface morphology of TiO₂ layers have shown that the surface roughness increases with the increase in annealing temperature. Spectrophotometric investigations have shown that TiO₂ layers are homogeneous and the width of the indirect optical band gap varies with annealing temperature from 3.53 eV to 3.73 eV.

Słowa kluczowe

EN

sol-gel; titania layer; dip-coating; surface roughness; optical properties

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, No. 4
• Strony: art. no. e147913
• Opis fizyczny: Bibliogr. 57 poz., rys., wykr.

Twórcy

autor

Zięba Magdalena

• Department of Optoelectronics. Silesian University of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland

• https://orcid.org/0000-0002-0126-031X

autor

Tyszkiewicz Cuma

• Department of Optoelectronics. Silesian University of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland

• https://orcid.org/0000-0001-9724-5183

autor

Gondek Ewa

• Department of Physics, Cracow University of Technology, ul. Podchorążych 1, 30-084 Kraków, Poland

• https://orcid.org/0000-0002-3692-1253

autor

Wojtasik Katarzyna

• Department of Physics, Cracow University of Technology, ul. Podchorążych 1, 30-084 Kraków, Poland

• https://orcid.org/0000-0002-2022-842X

autor

Nizioł Jacek

• Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

• https://orcid.org/0000-0001-9838-9269

autor

Dorosz Dominik

• Faculty of Materials Science and Ceramics AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

• https://orcid.org/0000-0001-5441-6851

autor

Starzyk Bartłomiej

• Faculty of Materials Science and Ceramics AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

• https://orcid.org/0000-0002-5434-6942

autor

Szymczak Patryk

• Faculty of Materials Science and Ceramics AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

• https://orcid.org/0000-0002-7792-8857

autor

Pakieła Wojciech

• Department of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

• https://orcid.org/0000-0002-6553-3217

autor

Rogoziński Roman

• Department of Optoelectronics. Silesian University of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland

• https://orcid.org/0000-0002-4164-6954

autor

Karasiński Paweł

• Department of Optoelectronics. Silesian University of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland

• https://orcid.org/0000-0002-5436-9212

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