Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

• Autorzy: Piskorski Ł. , Frasunkiewicz L. , Sarzała R. P.

Identyfikatory

DOI

10.1515/bpasts-2015-0070

• Języki publikacji: EN

Abstrakty

EN

In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.

Słowa kluczowe

EN

strained QWs; GaInNAs; GaInAsSb; mid-infrared radiation; numerical analysis

PL

napięte konstrukcje QWs; GaInNAs; GaInAsSb; analiza numeryczna

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2015
• Tom: Vol. 63, nr 3
• Strony: 597--603
• Opis fizyczny: Bibliogr. 29 poz., wykr.

Twórcy

autor

Piskorski Ł.

• Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

autor

Frasunkiewicz L.

• Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

autor

Sarzała R. P.

• Photonics Group, Institute of Physics, Lodz University of Technology, 219 Wolczanska St., 90-924 Lodz, Poland

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