Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP

• Autorzy: Braga Osvaldo M. , Delfino Cristian A. , Kawabata Rudy M. S. , Pinto Luciana D. , Vieira Gustavo S. , Pires Mauricio P. , Souza Patricia L. , Marega Euclydes , Carlin John A. , Krishna Sanjay

Identyfikatory

DOI

10.24425/opelre.2023.144562

• Konferencja: Quantum Structure Infrared Photodetectors - QSIP : International Conference 2020/2022 (11 ; 2022 ; Kraków, Poland)
• Języki publikacji: EN

Abstrakty

EN

The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsible for un unexpected increase of the surface current. The effect of residual doping is evaluated via numerical calculations of dark current, considering the range of doping concentrations expected for non-intentionally doped InP. The calculations show that the increase in dark current due to the residual doping of the regrown InP layer is not enough to justify the observed increase in surface current. On the other hand, the technique is still valid as a passivation method if the photodetector pixel is isolated by etching only the top contact layer.

Słowa kluczowe

EN

simulation; residual doping; recombination velocity; surface passivation; regrowth

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, Special Issue
• Strony: art. no. e144562
• Opis fizyczny: Bibliogr. 21 poz., rys., tab., wykr.

Twórcy

autor

Braga Osvaldo M.

• Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil

autor

Delfino Cristian A.

• Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil

autor

Kawabata Rudy M. S.

• LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil

autor

Pinto Luciana D.

• LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil

autor

Vieira Gustavo S.

• Institute for Advanced Studies, IEAV, 12228-001, São Paulo, Brazil

autor

Pires Mauricio P.

• Physics Institute, Federal University of Rio de Janeiro, Av. Athos da Silveira Ramos 149, 21941-909 Rio de Janeiro, Brazil

autor

Souza Patricia L.

• LabSem, CETUC, Pontifícia Universidade Católica, PUC-Rio, R. Marquês de São Vicente 124, Gávea, 22451-900 Rio de Janeiro, Brazil

autor

Marega Euclydes

• Universidade de São Paulo, USP-São Carlos, 13566-560 São Carlos, SP, Brazil

autor

Carlin John A.

• Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

autor

Krishna Sanjay

• Ohio State University, 281 W Lane Ave., Columbus, OH 43210, USA

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).