Design and performance of dual-band MWIR/LWIR focal plane arrays based on a type-II superlattice nBn structure

• Autorzy: Lee Hyun-Jin , Eom Jun Ho , Jung Hyun Chul , Kang Ko-Ku , Ryu Seong Min , Jang Ahreum , Kim Jong Gi , Kim Young Ho , Jung Han , Kim Sun Ho , Choi Jong Hwa

Identyfikatory

DOI

10.24425/opelre.2023.144560

• Konferencja: Quantum Structure Infrared Photodetectors - QSIP : International Conference 2020/2022 (11 ; 2022 ; Kraków, Poland)
• Języki publikacji: EN

Abstrakty

EN

Dual-band infrared detector, which acquires more image information than single-band detectors, has excellent detection, recognition, and identification capabilities. The dual-band detector can have two bumps to connect with each absorber layer, but it is difficult to implement small pitch focal plane arrays and its fabrication process is complicated. Therefore, the most effective way for a dual-band detector is to acquire each band by biasselectable with one bump. To aim this, a dual-band MWIR/LWIR detector based on an InAs/GaSb type-II superlattice nBn structure was designed and its performance was evaluated in this work. Since two absorber layers were separated by the barrier layer, each band can be detected by bias-selectable with one bump. The fabricated dual-band device exhibited the dark current and spectral response characteristics of MWIR and LWIR bands under negative and positive bias, respectively. Spectral crosstalk that is a major issue in dualband detectors was also improved. Finally, a 20 µm pitch 640 x 512 dual-band detector was fabricated, and both MWIR and LWIR images exhibited an average noise equivalent temperature difference of 30 mK or less at 80 K.

Słowa kluczowe

EN

InAs/GaSb type-II superlattice; dualband detector; dark current; spectral quantum efficiency; noise equivalent temperature difference

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, Special Issue
• Strony: art. no. e144560
• Opis fizyczny: Bibliogr. 17 poz., rys., tab., wykr.

Twórcy

autor

Lee Hyun-Jin

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

• https://orcid.org/0000-0002-5910-9751

autor

Eom Jun Ho

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Jung Hyun Chul

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Kang Ko-Ku

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Ryu Seong Min

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Jang Ahreum

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Kim Jong Gi

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Kim Young Ho

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Jung Han

• i3system, Inc., 26-32, Gajeongbuk-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea

autor

Kim Sun Ho

• Agency of Defense Development, 34186 P.O.Box 35, Yuseong-gu, Daejeon, Republic of Korea

autor

Choi Jong Hwa

• Agency of Defense Development, 34186 P.O.Box 35, Yuseong-gu, Daejeon, Republic of Korea

Bibliografia

• [1] Kim, T., Lee, H., Bae, J. & Kim, T. Susceptibility of combat aircraft modeled as an anisotropic source of infrared radiation. IEEE Trans. Aerosp. Electron. Syst. 52, 2467–2476 (2016). https://doi.org/10.1109/TAES.2016.150513
• [2] Rogalski, A., Kopytko, M. & Martyniuk, P. Antimonide-Based Infrared Detectors – A New Perspective. (SPIE, 2019). https://spie.org/Publications/Book/2278813
• [3] Reago, D., Horn, S., Cambell, J. & Vollmerhausen, R. Third-generation imaging sensor system concepts. Proc. SPIE 3701, 108 (1999). https://doi.org/10.1117/12.352991
• [4] Norton, P. Third-generation sensors for night vision. Opto-Electron. Rev. 14, 1–10 (2006). https://doi.org/10.2478/s11772-006-0001-5
• [5] Rogalski, A., Antoszewski, J. & Faraone, L. Third-generation infrared photodetector arrays. J. Appl. Phys. 105, 091101 (2009). https://doi.org/10.1063/1.3099572
• [6] Reine, M. B. HgCdTe photodiodes for IR detection: a review. Proc. SPIE 4288, VI (2001). https://doi.org/10.1117/12.429413
• [7] Zanatta, J. et al. Single- and two-color infrared focal plane arrays made by MBE in HgCdTe. Proc. SPIE 4130, 441 (2000). https://doi.org/10.1117/12.409885
• [8] Tennant, W. et al. A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays. J. Electron. Mater. 30, 590–594 (2001). https://doi.org/10.1007/BF02665839
• [9] Myers, S. et al. Comparison of superlattice based dual color nBn and pBp infrared detectors. Proc. SPIE. 8155, 815507-1 (2011). https://doi.org/10.1117/12.894986
• [10] Plis, E. et al. High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures. Proc. SPIE. 8012, 80120X-1 (2011). https://doi.org/10.1117/12.882399
• [11] Gautam, N. et al. Three color infrared detector using InAs/GaSb superlattices with unipolar barriers. Appl. Phys. Lett. 98, 121106 (2011). https://doi.org/10.1063/1.3570687
• [12] Lee, H. et al. Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors. Opt. Lett. 46, 3877–3880 (2021). https://doi.org/10.1364/OL.435479
• [13] Jang, A. et al. Effect of Barrier Layer on InAs/GaSb Type-II Superlattice nBn Detector. in 2021 International Conference on Electronics, Information, and Communication (ICEIC) 1–3 (2021). https://doi.org/10.1109/ICEIC51217.2021.9369773
• [14] Lee, H. et al. Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure. Infrared Phys. Technol. 94, 161–164 (2018). https://doi.org/10.1016/j.infrared.2018.09.009
• [15] Jung, H. et al. Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector. Proc. SPIE. 11741, 117411V (2021). https://doi.org/10.1117/12.2588043
• [16] Kang, K. et al. Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors. Proc. SPIE. 11741, 117411U (2021). https://doi.org/10.1117/12.2588041
• [17] Lee, H. et al. Plasma treatment for surface stabilization in InAs/GaSb type-II superlattice LWIR and VLWIR photodetectors. J. Electron. Mater. 51, 4689–4694 (2022). https://doi.org/10.1007/s11664-022-09703-7

Uwagi

1. Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).

2. The authors gratefully acknowledge the financial support provided by Agency for Defense Development in Korea.