Investigation on nonlinear optical and dielectric properties of L-arginine doped ZTC crystal to explore photonic device applications

• Autorzy: Anis M. , Hussaini S. S. , Shirsat M. D. , Muley G. G.

Identyfikatory

DOI

10.1515/msp-2016-0070

• Języki publikacji: EN

Abstrakty

EN

The present study is focused to explore the photonic device applications of L-arginine doped ZTC (LA-ZTC) crystals using nonlinear optical (NLO) and dielectric studies. The LA-ZTC crystals have been grown by slow evaporation solution technique. The chemical composition and surface of LA-ZTC crystal have been analyzed by means of energy dispersive spectroscopy (EDS) and surface scanning electron microscopy (SEM) techniques. The Vicker’s microhardness study has been carried out to determine the hardness, work hardening index, yield strength and elastic stiffness of LA-ZTC crystal. The enhanced SHG efficiency of LA-ZTC crystal has been ascertained using the Kurtz-Perry powder SHG test. The closed-and-open aperture Z-scan technique has been employed to confirm the third order nonlinear optical nature of LA-ZTC crystal. The Z-scan transmittance data has been utilized to calculate the superior cubic susceptibility, nonlinear refractive index, nonlinear absorption coefficient and figure of merit of LA-ZTC crystal. The behavior of dielectric constant and dielectric loss of LA-ZTC crystal at different temperatures has been investigated using the dielectric analysis.

Słowa kluczowe

EN

crystal growth; spectroscopic studies; microhardness studies; SHG; efficiency test; Z-scan; analysis; dielectric studies

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 3
• Strony: 548--554
• Opis fizyczny: Bibliogr. 29 poz., rys., tab.

Twórcy

autor

Anis M.

• Department of Physics, Sant Gadge Baba Amravati University, Amravati-444602, Maharashtra, India

autor

Hussaini S. S.

• Crystal Growth Laboratory, Department of Physics, Milliya Arts, Science Beed-431122,Maharashtra,India

autor

Shirsat M. D.

• Intelligent Materials Research Laboratory, Department of Physics, Dr. Babasaheb Aurangabad-431005, Maharashtra, India

autor

Muley G. G.

• DepartmentofPhysics,SantGadgeBabaAmravatiUniversity,Amravati-444602,Maharashtra,India

Bibliografia

• 1. Vanishri S., Babu Reddy J.N., Bhat H.L., Ghosh S., Appl. Phys. B, 88 (2007), 457.
• 2. Ravindra H.J., Chandrashekaran K., Harrison W.T.A., Dharmaprakash S.M., Appl. Phys. B, 94 (2009), 503.
• 3. Hussaini S.S., Dhumane N.R., Dongre V.G., Shirsat M.D., J. Optoelectron. Adv. M., 2 (2008), 108.
• 4. Dhumane N.R., Hussaini S.S., Dongre V.G., Ghugare P., Shirsat M.D., Appl. Phys. A, 95 (2009), 727.
• 5. Anis M., Shaikh R.N., Shirsat M.D., Hussaini S.S., Opt. Laser Technol., 60 (2014), 124.
• 6. Balu T., Rajasekaran T.R., Muru-Gakoothan P., Physica B, 404 (2009), 1813.
• 7. Moitra S., Kar T., Mater. Chem. Phys., 117 (2009), 204.
• 8. Anis M., Muley G.G., Rabbani G., Shirsat M.D., Hussaini S.S., Mater. Technol. Adv. Perform. M, 30 (2015), 129.
• 9. Khandpekar M.M., Dongare S.S., Patil S.B., Pati S.P., Opt. Commun., 285 (2012), 1253.
• 10. Anis M., Muley G.G., Shirsat M.D., Hussaini S.S., Cryst. Res. Technol., 50 (2015), 372.
• 11. Pandian M.S., Balamurugan N., Bhagavan-Narayana G., Ramasamy P., J. Cryst. Growth, 310 (2008), 4143.
• 12. Pandian M.S., Ramasamy P., J. Cryst. Growth, 310 (2008), 2563.
• 13. Pabitha G., Dhanasekaran R., Mater. Sci. Eng. B-Adv., 177 (2012), 1149.
• 14. Pandian M.S., Ramasamy P., J. Cryst. Growth, 312 (2010), 413.
• 15. Kurtz S.K., Perry T.T., J. Appl. Phys., 39 (1968), 3798.
• 16. Xu D., Liu M.-G., Hou W.-B., Yuan D.-R., Jiang M.-H., Ren Q., Chai B.H.C., Mater. Res. Bull., 29 (1994), 73.
• 17. Mansoor S.-B., Said A.A., Wei T.-H., David J. Hagan, Stryland van E.W., IEEE J. Quantum Elect., 26 (1990), 760.
• 18. Anis M., Muley G.G., Hakeem A., Shirsat M.D., Hussaini S.S., Opt. Mater., 46 (2015), 517.
• 19. Anis M., Shirsat M.D., Muley G., Hussaini S.S., Physica B, 449 (2014), 61.
• 20. Major A., Aitchison J.S., Smith P.W.E., Druon F., Georges P., Viana B., Aka G.P., Appl. Phys. B, 80 (2005), 199.
• 21. Jin L.T., Wang X.Q., Ren Q., Cai N.N., Chen J.W., Li T.B., Liu X.T., Wang L.N., Zhang G.H., Zhu L.Y., Xu D., J. Cryst. Growth, 356 (2012), 10.
• 22. Gu B., Huang X.Q., Tan S.Q., Wang M., Ji W., Appl. Phys. B, 95 (2009), 375.
• 23. Kumar S.S.R., Rao V.S., Giribabu L., Rao N.D., Chem. Phys. Lett., 447 (2007), 274.
• 24. Srinivasan P., Nooraldeen A.Y., Kanagasekaran T., Dhinaa A.N., Palanisamy P.K., Gopalakrishnan R., Laser Phys., 18 (2008), 790.
• 25. Girisun S.T.C., Dhanuskodi S., Mangalaraj D., Phillip J., Curr. Appl. Phys., 11 (2011), 838.
• 26. Kumar A.R., Vizhi E.R., Vijayan N., Bhagavan-Narayana G., Babu R.D., J. Pure Appl. Indian Phys., 1 (2010), 61.
• 27. Anusha P.T., Reeta S.P., Giribabu L., Tewari S.P., Rao V.S., Mater. Lett., 64 (2010), 1915.
• 28. Anis M., Muley G.G., Shirsat M.D., Hussaini S.S., Mater. Res. Innov., 19 (2015), 338.
• 29. Shaikh R.N., Anis M., Shirsat M.D., Hussaini S.S., J. Optoelectron. Adv. M.,16 (2014), 1147.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.