PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.
Słowa kluczowe
Twórcy
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland
autor
  • Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland
autor
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland
Bibliografia
  • 1. B. Jalali, M. Paniccia, and G. Reed, “Silicon photonics,” IEEE Microw. Mag. 7, 58-68 (2006).
  • 2. A. Liu, H. Rong, M. Paniccia, O. Cohen, and D. Hak, “Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering,” Opt. Express 12, 4261-8 (2004).
  • 3. Q. Xu, V. R. Almeida, and M. Lipson, “Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide,” Opt. Lett. 30, 35-7 (2005).
  • 4. H. Rong, Y. -H. Kuo, S. Xu, A. Liu, R. Jones, M. Paniccia, O. Cohen, and O. Raday, “Monolithic integrated Raman silicon laser”, Opt. Express 14, 6705-6712 (2006).
  • 5. H. Rong, S. Xu, Y.-H. Kuo, V. Sih, O. Cohen, O. Raday, and M. Paniccia, “Low-threshold continues-wave Raman silicon laser”, Nat. Photonics, 1, 232-237 (2007).
  • 6. H. Rong, S. Xu, O. Cohen, O. Raday, M. Lee, V. Sih, and M. Paniccia, “A cascaded silicon Raman laser”, Nature Photonics 2, 170-174 (2008).
  • 7. R. Claps, D. Dimitropoulos , Y. Han, and B. Jalali, “Observation of Raman emission in silicon waveguides at 1.54 µm,” Opt. Express 10, 1305-1313 (2002).
  • 8. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, “Observation of stimulated Raman amplification in silicon waveguides,” Opt. Express 11, 1731-9 (2003).
  • 9. Q. Xu, V. R. Almeida, and M. Lipson, “Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguides,” Opt. Express 12, 4437-42 (2004).
  • 10. R. L. Espinola, J. I. Dadap, R. M. Jr Osgood, S. J. McNab, and Y. A. Vlasov, “Raman amplification in ultrasmall silicon-on-insulator wire waveguides,” Opt. Express 12, 3713-8 (2004).
  • 11. V. M. N. Passaro and F. De Leonardis, “Space-time modeling of Raman pulses in silicon-on-insulator optical wave-guides, ” J. Lightw. Technol. 24, 2920-31 (2006).
  • 12. M. Krause, H. Renner, and E. Brinkmeyer, “Analysis of Raman lasing characteristics in silicon-on-insulator waveguides,” Opt. Express 12, 5703-10, (2004).
  • 13. F. De Leonardis, V. Dimastrodonato, and M. N. Passaro, “Modelling of a DFB laser based on Raman effect in a silicon-on-insulator rib waveguide,” Semicond. Sci. Technol. 23 064008, 1-10 (2008).
  • 14. A. Tyszka-Zawadzka, P. Szczepański, M. Karpierz, A. Mossakowska-Wyszyńska, and M. Bugaj, „Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide”, Proc. SPIE 8431, 84311X-1-84311X-10 (2012).
  • 15. M. Koba and P. Szczepański, “Approximate analysis of nonlinear operation of square lattice photonic crystal laser,” IEEE J. Quantum Electron. 46, 1003-1008 (2010).
  • 16. R. Jones, H. Rong, A. Liu, A. W. Fang, and M. J. Paniccia, “Net continues wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering”, Opt. Express 13, 519-525 (2005).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-ca8cf39d-8f12-405e-afb7-bc33ab6cfcba
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.