Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

• Autorzy: Badura M. , Bielak K. , Ściana B. , Radziewicz D. , Pucicki D. , Dawidowski W. , Żelazna K. , Kudrawiec R. , Tłaczała M.

Identyfikatory

DOI

10.5277/oa160208

• Języki publikacji: EN

Abstrakty

EN

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular beam epitaxy, however, the prevalence of metalorganic vapour phase epitaxy techniques in the fabrication of semiconductor structures causes a perpetual work on the improvement production of the entire quantum cascade laser structure by the metalorganic vapour phase epitaxy. The paper presents technological aspects connected with the metalorganic vapour phase epitaxy growth of InGaAs/AlInAs low-dimensional structures for quantum cascade laser active region emitting ~9.6 μm radiation. Epitaxial growth of superlattice made of InGaAs/AlInAs lattice matched to InP was conducted at the AIXTRON 3x2″ FT system. Optical and structural properties of such heterostructures were characterised by means of high resolution X-ray diffraction, photoluminescence, contactless electroreflectance and scanning electron microscope techniques. Epitaxial growth and possible solutions of structure improvements are discussed.

Słowa kluczowe

EN

InGaAs; AlInAs; superlattice; metalorganic vapour phase epitaxy; MOVPE; quantum cascade laser; QCL

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2016
• Tom: Vol. 46, nr 2
• Strony: 241--248
• Opis fizyczny: Bibliogr. 13 poz., rys.

Twórcy

autor

Badura M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Bielak K.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Dawidowski W.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

autor

Żelazna K.

• Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland

autor

Kudrawiec R.

• Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

Bibliografia

• [1] GMACHL C., CAPASSO F., SIVCO D.L., CHO A.Y., Recent progress in quantum cascade lasers and applications, Reports on Progress in Physics 64(11), 2001, pp. 1533–1601.
• [2] FAIST J., CAPASSO F., SIVCO D.L., SIRTORI C., HUTCHINSON A.L., CHO A.Y., Quantum cascade laser, Science 264(5158), 1994, pp. 553–556.
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• [4] NAKANO T., SHIODA T., SUGIYAMA M., NAKANO Y., SHIMOGAKI Y., Competitive kinetics model to explain surface segregation of indium during InGaP growth by using metal organic vapor phase epitaxy, Japanese Journal of Applied Physics 48(1R), 2009, article 011101.
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• [10] YONG HUANG, JAE-HYUN RYOU, DUPUIS R.D., PFLÜGL C., CAPASSO F., KEWEI SUN, FISCHER A.M., PONCE F.A., Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition, Journal of Crystal Growth 316(1), 2011, pp. 75–80.
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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.