MBE-grown MCT hetero- and nanostructures for IR and THz detectors

• Autorzy: Dvoretsky S. A. , Mikhailov N. N. , Remesnik V. G. , Sidorov Y. G. , Shvets V. A. , Ikusov D. G. , Varavin V. S. , Yakushev M. V. , Gumenjuk-Sichevska J. V. , Golenkov A. G. , Lysiuk I. O. , Tsybrii Z. F. , Shevchik-Shekera A. V. , Sizov F. F. , Latyshev A. V. , Aseev A. L.

Identyfikatory

DOI

10.1016/j.opelre.2019.07.002

• Języki publikacji: EN

Abstrakty

EN

We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the epitaxial layer growth on (013) GaAs substrates with ZnTe and CdTe buffer layers up to 3” in diameter with the precise ellipsometric monitoring in situ. The growth of MCT alloy heterostructures with the optimal composition distribution throughout the thickness allows the realization of different types of many-layered heterostructures and quantum wells to prepare the material for fabricating single- or dual-band IR and THz detectors. We also present the two-color broad-band bolometric detectors based on the epitaxial MCT layers that are sensitive in 150–300-GHz subterahertz and infrared ranges from 3 to 10μm, which operate at the ambient or liquid nitrogen temperatures as photoconductors, as well as the detectors based on planar HgTe quantum wells. The design and dimensions of THz detector antennas are optimized for reasonable detector sensitivity values. A special diffraction limited optical system for the detector testing was designed and manufactured. We represent here the THz images of objects hidden behind a plasterboard or foam plastic packaging, obtained at the radiation frequencies of 70, 140, and 275 GHz, respectively.

Słowa kluczowe

EN

growth; HgCdTe; molecular-beam epitaxy; detector; infrared; terahertz

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2019
• Tom: Vol. 27, No. 3
• Strony: 282--290
• Opis fizyczny: Bibliogr. 42 poz., wykr., rys., fot.

Twórcy

autor

Dvoretsky S. A.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia
• Tomsk State University, 36 Lenin aven., 634050, Tomsk, Russia

autor

Mikhailov N. N.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia
• Novosibirsk State University, 1 Pirogov str., Novosibirsk, 630090, Russia

autor

Remesnik V. G.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Sidorov Y. G.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Shvets V. A.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Ikusov D. G.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Varavin V. S.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Yakushev M. V.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Gumenjuk-Sichevska J. V.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Golenkov A. G.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Lysiuk I. O.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Tsybrii Z. F.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Shevchik-Shekera A. V.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Sizov F. F.

• Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine

autor

Latyshev A. V.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

autor

Aseev A. L.

• Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia

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Uwagi

1. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).

2. Funding This work was partially supported by grants RBFR “18-52-16007NTSIL a”, “18-52-16008 NTSIL a” and the Volkswagen Stiftung Program, and NANO Program.