Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

• Autorzy: Gelczuk Ł. , Dąbrowska-Szata M. , Ściana B. , Pucicki D. , Radziewicz D. , Kopalko K. , Tłaczała M.

Identyfikatory

DOI

10.1515/msp-2016-0126

• Języki publikacji: EN

Abstrakty

EN

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

Słowa kluczowe

EN

GaNAs; dilute nitrides; deep-level defects; DLTS; LDLTS; AP MOVPE

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 726--734
• Opis fizyczny: Bibliogr. 37 poz., rys., tab.

Twórcy

autor

Gelczuk Ł.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Dąbrowska-Szata M.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Ściana B.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

autor

Kopalko K.

• Institute of Physics, Polish Academy of Science, al. Lotnikow 32/46, 02-668 Warsaw, Poland

autor

Tłaczała M.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).