First-principle study on the effect of S/Se/Te doping and VZn-Hi coexistence on ZnO electrical conductivity

• Autorzy: Gu Yulan , Hou Qingyu , Qi Mude , Yin Xiang , Wang Zhichao

Identyfikatory

DOI

10.2478/msp-2022-0047

• Języki publikacji: EN

Abstrakty

EN

In a vacuum environment, when ZnO is prepared using the chemical vapor deposition method and the molecular beam epitaxial growth method, H-gap impurities inevitably remain in the ZnO system, which is often ignored. The study of Zn vacancies under experimental conditions poses a challenge. Second, as an n-type semiconductor, ZnO is characterized by a self-compensation of natural donor defects and poor stability, which severely limit the acquisition of p-type ZnO. Based on the above problems, the conductive properties of S/Se/Te doped and V_Zn-H_i coexisting ZnO were investigated by first principle to acquire high-stability and high-quality p-ZnO. The study found that Zn₃₅SO₃₅, Zn₃₅SeO₃₅, and Zn₃₅SH_iO₃₅ all have good p-type conductivity, which can effectively improve hole mobility and electrical conductivity. Among them, Zn₃₅SO₃₅ has the largest hole concentration at 2.80×10²¹ cm⁻³, as well as the best conductivity. The choice of Zn₃₅SO₃₅ provides a reference for obtaining new high-quality p-type ZnO semiconductors.

Słowa kluczowe

EN

ZnO; S/Se/Te doping; H gap; p-type conductivity

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2022
• Tom: Vol. 40, No. 4
• Strony: 54--63
• Opis fizyczny: Bibliogr. 39 poz., rys., tab.

Twórcy

autor

Gu Yulan

• College of Science, Inner Mongolia University of Technology, Hohhot, 010051, PR China

autor

Hou Qingyu

• College of Science, Inner Mongolia University of Technology, Hohhot, 010051, PR China
• College of Materials Science and Engineering, Inner Mongolia Key Laboratory of Thin Film and Coatings, Inner Mongolia University of Technology, PR China

autor

Qi Mude

• College of Materials Science and Engineering, Inner Mongolia Key Laboratory of Thin Film and Coatings, Inner Mongolia University of Technology, PR China

autor

Yin Xiang

• College of Science, Inner Mongolia University of Technology, Hohhot, 010051, PR China

autor

Wang Zhichao

• College of Science, Inner Mongolia University of Technology, Hohhot, 010051, PR China

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).