Compact Transverse Electric Silicon-on-Insulator Mode Converter for Mode-Division Multiplexer

• Autorzy: Sharaf Mohamed H. , El-Mashade Mohamed B. , Emran Ahmed A.

Identyfikatory

DOI

10.24425/ijet.2022.139878

• Języki publikacji: EN

Abstrakty

EN

On-chip optical-interconnect technology emerges as an attractive approach due to its ultra-large bandwidth and ultra-low power consumption. Silicon-on-insulator (SOI) wire waveguides, on the other hand, have been identified to potentially replace copper wires for intra-chip communication. To take advantage of the wide bandwidth of SOI waveguides, wavelengthdivision multiplexing (WDM) has been implemented. However, WDM have inherent drawbacks. Mode-division multiplexing (MDM) is a viable alternative to WDM in MIMO photonic circuits on SOI as it requires only one carrier wavelength to operate. In this vein, mode converters are key components in on-chip MDM systems. The goal of this paper is to introduce a transverse electric mode converter. The suggested device can convert fundamental transverse electric modes to first-order transverse electric ones and vice versa. It is based on small material perturbation which introduces gradual coupling between different modes. This device is very simple and highly compact; the size of which is 3 μm². Mathematical expressions for both the insertion loss and crosstalk are derived and optimized for best performance. In addition, three-dimensional finite-difference time-domain (3D-FDTD) simulations are performed in order to verify the mathematical model of the device. Our numerical results reveal that the proposed device has an insertion loss of 1.2 dB and a crosstalk of 10.1 dB. The device’s insertion loss can be decreased to 0.95 dB by adding tapers to its material perturbation.

Słowa kluczowe

EN

integrated optics; silicon-on-insulator waveguide; WDM systems; MDM system; perturbation theory; integrated optical; devices; hybrid modes; guided waves

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2022
• Tom: Vol. 68, No. 2
• Strony: 275--280
• Opis fizyczny: Bibliogr. 14 poz., rys., wykr.

Twórcy

autor

Sharaf Mohamed H.

• Electrical Engineering Department, Faculty of Engineering, Al-Azhar University, Cairo, Egypt

autor

El-Mashade Mohamed B.

• Electrical Engineering Department, Faculty of Engineering, Al-Azhar University, Cairo, Egypt

autor

Emran Ahmed A.

• Electrical Engineering Department, Faculty of Engineering, Al-Azhar University, Cairo, Egypt

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).