Silicon-on-Insulator technology for imaging and application to a switching photodetector

• Autorzy: Abdo N. , Sallin D. , Koukab A. , Estribeau M. , Magnan P. , Kayal M.
• Języki publikacji: EN

Abstrakty

EN

This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for low light imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a resonant cavity, which is useful in application with a very narrow spectrum of interest, such as bioluminescence imaging. The SOI implementation of a switching photodetector based with an hybrid MOS-PN structure is presented and its advantages in terms of dark current minimization and SNR improvement highlighted.

Słowa kluczowe

EN

photodetectors; silicon-on-insulator

PL

fotodetektory; SOI

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2015
• Tom: Vol. 6, nr 4
• Strony: 136--141
• Opis fizyczny: Bibliogr. 11 poz., il. kolor., wykr.

Twórcy

autor

Abdo N.

• Integrated Image Sensor Laboratory, ISAE-SUPAERO, 10 Av. E. Belin BP 4032, 31055 Toulouse Cedex 4, France

autor

Sallin D.

• Institute of Electrical Engineering (IEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

autor

Koukab A.

• Institute of Electrical Engineering (IEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

autor

Estribeau M.

• Integrated Image Sensor Laboratory, ISAE-SUPAERO, 10 Av. E. Belin BP 4032, 31055 Toulouse Cedex 4, France

autor

Magnan P.

• Integrated Image Sensor Laboratory, ISAE-SUPAERO, 10 Av. E. Belin BP 4032, 31055 Toulouse Cedex 4, France

autor

Kayal M.

• Institute of Electrical Engineering (IEL), École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

Bibliografia

• [1] H. Eltoukhy, K. Salama, and A. El Gamal, “A 0.18-µm CMOS bioluminescence detection lab-on-chip,” IEEE J. Solid-State Circuits, vol. 41, no. 3, pp. 651–662, Mar. 2006.
• [2] D. Ho, M.O. Noor, U.J. Krull, G. Gulak, “CMOS Tunable-Color Image Sensor With Dual-ADC Shot-Noise-Aware Dynamic Range Extension,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 60, no. 8, pp. 2116-2129, Aug. 2013.
• [3] R. R. Singh, B. Li, A. Ellington, and Arjang Hassibi, “A CMOS Σ-Δ Photodetector Array for Bioluminescence-Based DNA Sequencing,” in Proc. IEEE Symp. VLSI Circuits, Jun. 2011, pp. 96-97.
• [4] D. Sallin, A. Koukab, and M. Kayal, “Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging,” Opt. Express, vol. 22, no.12, pp. 14441-14449, Jun. 2014.
• [5] D. Sallin, A. Koukab, and M. Kayal, “MOS-PN Hybrid Device with Minimum Dark Current for Sensitive Digital Photodetection,” IEEE Photon. Technol. Lett., vol. 26, no. 20, pp. 2062-2065, Oct 2014.
• [6] M. Born and E. Wolf, Principles of Optics MacMillan, NewYork, 1964, p. 254.
• [7] Z. Knittl, Optics of Thin Films, Wiley, London, 1976, p. 41. [8] M. G. Moharam, T. K. Gaylord, D. A. Pommet, and E. B. Grann, "Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: enhanced transmittance matrix approach," J. Opt. Soc. Am. A, vol. 12, no. 5, pp. 1077-1086, May 1995.
• [9] D. Sallin, A. Koukab, and M. Kayal, “Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector,” Opt. Lett., vol. 40, no.4, pp. 669-672, Feb. 2015.
• [10] D. G. Chen, D. Matolin, A. Bermak, C. Posch, “Pulse-Modulation Imaging – Review and Performance Analysis”, IEEE Trans. Biomed. Circuits Syst., vol. 5, no. 1, pp. 64-82, Feb 2011.
• [11] D. Sallin, A. Koukab, and M. Kayal, “Design of a Direct Light to Time Converter and its Noise Analysis,” in IEEE Proc. of the 21st International Conference on Electronics Circuits and Systems—ICECS2014, Marseille, France, Dec. 7-10, 2014.