In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures

• Autorzy: Godlewski M. , Wojtowicz T. , Goldys E. M. , Phillips M. R. , Czernecki R. , Prystawko P. , Leszczynski M. , Perlin P. , Grzegory I. , Porowski S. , Bottcher T. , Figge S. , Hommel D.
• Konferencja: International Conference on Solid State Crystals : Material Science and Applications (4ICSSC) and Polish Conference on Crystal Growth (7PCCG) ; (16-20.05.2004 ; Zakopane-Kościelisko, Poland)
• Języki publikacji: EN

Abstrakty

EN

Cathodoluminescence (CL) technique is applied for evaluation of in-depth and in-plane variations of light emission from semiconductor heterostructures, including laser diode structures. Light emission properties of heteroepitaxial and heteroepitaxial structures, are studied. We demonstrate possibility of in-depth profiling of complicated multi quantum well structures, which allows us to evaluate light emission characteristics from different regions of, e.g., laser structures. Due to this property of the CL, we can evaluate interconnections between structural quality of the samples and light emission characteristics. Stimulated emission under electron bean pumping is achieved in a conventional CL, set up for selected heterostructures. Thereshold currents for stimulated emission are evaluated from the CL investigations. We demonstrate that potential fluctuations are not fully screened in the active regions of laser structures, even at large excitation densities.

Słowa kluczowe

EN

semiconductors; heterostructures; cathodoluminescence; depth profiling; defect distribution; laser emission analysis

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2004
• Tom: Vol. 12, No. 4
• Strony: 353--359
• Opis fizyczny: Bibliogr. 21 poz., il., wykr.

Twórcy

autor

Godlewski M.

• Institute of Physics Polskish Acad. Sci., 34/46 Lotników Ave., 02-668 Warsaw, Poland
• Department of Mathematics and Natural Science College of Science, Cardinal S. Wyszyński University, 5 Dewajtis Str., 01-815 Warsaw, Poland

autor

Wojtowicz T.

• Institute of Physics Polskish Acad. Sci., 34/46 Lotników Ave., 02-668 Warsaw, Poland

autor

Goldys E. M.

• Division on Information and Communication Sciences, Macquarie University, Balaclava Road, NSW Sydney 2109, Australia

autor

Phillips M. R.

• Microstructural Analysis Unit, University of Technology, PO Box 123, Broadway NSW Sydney 2107, Australia

autor

Czernecki R.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Prystawko P.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Leszczynski M.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Perlin P.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Grzegory I.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Porowski S.

• High Pressure Res. Centre (Unipress), Polish Acad. Sci., 29/37 Sokołowska Str., 01-142 Warsaw, Poland

autor

Bottcher T.

• Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany

autor

Figge S.

• Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany

autor

Hommel D.

• Institute of Solid State Physics, University of Bremen, D-28334 Bremen, Germany

Bibliografia

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