Grain growth kinetics for B2O3-doped ZnO ceramics

• Autorzy: Yuksel B. , Ozkan T. O.

Identyfikatory

DOI

10.1515/msp-2015-0029

• Języki publikacji: EN

Abstrakty

EN

Grain growth kinetics in 0.1 to 2 mol % B₂O₃ -added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation Gⁿ = K₀ t exp(-Q/RT) together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250 °C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 0.1 mol % B₂O₃ -doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B₂O₃ content to 1 mol %, the grain growth exponent value (n) and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn₃B₂O₆ formed when the B₂O₃ content was > 1 mol %. The formation of Zn3B2O6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 2 mol % B₂O₃ -doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning) mechanism in the liquid phase sintering.

Słowa kluczowe

EN

boron oxide; grain growth; zinc oxide

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 2
• Strony: 220--229
• Opis fizyczny: Bibliogr. 35 poz., rys., tab.

Twórcy

autor

Yuksel B.

• Istanbul University, Engineering Faculty, Metallurgical and Materials Engineering Department, Avcilar, 34320, Istanbul, Turkey

autor

Ozkan T. O.

• Istanbul University, Engineering Faculty, Metallurgical and Materials Engineering Department, Avcilar, 34320, Istanbul, Turkey

Bibliografia

• [1] SUCHEA M., CHRISTOULAKIS S., MOSCHOVIS K., KATSARAKIS N., KIRIAKIDIS G., Thin Solid Films, 515 (2006), 551.
• [2] SENDA T., BRADT R.C., J. Am. Ceram. Soc., 73 (1990), 106.
• [3] LOKHANDE B.J., PATIL P.S., UPLANE M.D., Physica B, 302 – 303 (2001), 59.
• [4] CHEN X.L., XU B.H., XUE J.M., ZHAO Y., WEI C.C., SUN J., WANG Y., ZHANG X.D., GENG X.H., Thin Solid Films, 515 (2007), 3753.
• [5] ISHIZAKI H., IMAIZUMI M., MATSUDA S., IZAKI M., ITO T., Thin Solid Films, 411 (2002), 65.
• [6] TAHAR R.B.H., TAHAR N.B.H., J. Mater. Sci., 40 (2005), 5285.
• [7] GAO P.X., WANG Z.L., J. Appl. Phys., 97 (2005), 044304 1.
• [8] ISLAM M.N., SAMANTARAY B.K., CHOPRA K.L., ACHARYA H.N., Sol. Energ. Mat. Sol. C., 29 (1993), 27.
• [9] OBA F., NISHITANI S. R., ISOTANI S., ADACHI H., TANAKA I., J. Appl. Phys., 90 (2001), 824.
• [10] HAGEMARK K. I., J. Solid State Chem., 16 (1976), 293.
• [11] MAHAN G.D., J. Appl. Phys., 54 (1983), 3825.
• [12] ZIEGLER E., HEINRICH A., OPPERMANN H., STR¨O VER G., Phys. Status Solidi A, 66 (1981), 635.
• [13] NEUMANN G., Phys. Status Solidi B, 105 (1981), 605.
• [14] MARKEVICH I. V., KUSHNIRENKO V. I., BORKOVSKA L. V., BULAKH B. M., Phys. Status Solidi C, 3 (4) (2006), 942.
• [15] HAUSMANN A., SCHALLENBERGER B., Z. Phys. B, 31 (1978), 269.
• [16] HAN J., MANTAS P.Q., SENOS A.M.R., J. Eur. Ceram. Soc., 21 (2001), 1883.
• [17] YOON M.H., LEE S.H., PARK H.L., KIM H.K., JANG M.S., J. Mater. Sci. Lett., 21 (2002), 1703.
• [18] ZHANG Y., HAN J., Mater. Lett., 60 (2006), 2522.
• [19] TOPLAN O., GUNAY V., OZKAN T.O., Ceram. Int., 23 (1997), 251.
• [20] HAN J., MANTAS P.Q., SENOS A.M.R., J. Eur. Ceram. Soc., 20 (2000), 2753.
• [21] ABDUEV A.K., ASVAROV S., AKHMEDOV A.K., KAMILOV I.K., US Patent 20090218735 A1, 3. Sep. 2009.
• [22] KUSHNIRENKO V.I., MARKEVICH I.V., RUSAVSKY A.V., Radiat. Meas., 45 (2010), 468.
• [23] LEVINSON L. M., US patent 4460623, 17. Jul. 1984.
• [24] LIU F., XU G., DUAN L., LI Y., LI Y., CUI P., J. Alloy. Compd., 509 (2011), L56.
• [25] GLOT A. B., MAZURIK S. V., Inorg. Mater.+, 36 (2000), 636.
• [26] CHENG L., LI G., YUAN K., MENG L., ZHENG L., J. Am. Ceram. Soc., 95 (2012), 1004.
• [27] GUPTA T. K., COBLE R. L., J. Am. Ceram. Soc., 51 (1968), 521.
• [28] NORRIS L.F., PARRAVANO G., J. Am. Ceram. Soc., 46 (1963), 449.
• [29] NICHOLSON G.C., J. Am. Ceram. Soc., 48 (1965), 214.
• [30] WONG J., J. Appl. Phys., 51 (1980), 4453.
• [31] ASOKAN T., IYENGAR G.N., NAGABHUSHANA G.R., J. Mater. Sci., 22 (1987), 2229.
• [32] FAN J., SALE F.R., J. Am. Ceram. Soc., 20 (2000), 2743.
• [33] HNG H. H., HALIM L., Mater. Lett., 57 (2003), 1411.
• [34] HAN J., MANTAS P.Q., SENOS A.M.R., J. Mater. Res., 16 (2001), 459.
• [35] BRADT R.C., NUNES S.I., SENDA T., SUZUKI H., BURKETT S.L., Grain Growth, in: GERMAN R.M., MESSING G.L., CORNWALL R.G. (Eds.), Sintering Technology, Marcel Dekker, New York, 1996, p. 389.