Photovoltage formation across Si p-n junction exposed to laser radiation

• Autorzy: Ašmontas S. , Gradauskas J. , Sužiedėlis A. , Šilėnas A. , Širmulis E. , Švedas V. , Vaičikauskas V. , Vaičiūnas V. , Žalys O. , Kostylyov V.

Identyfikatory

DOI

10.1515/msp-2017-0106

• Języki publikacji: EN

Abstrakty

EN

Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage U_ph due to intense electronhole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = U_f + U_ph. The first U_f is a fast one having polarity of thermoelectromotive force of hot carriers. The second U_ph is classical photovoltage with polarity opposite to U_f. It is found that U_f is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

Słowa kluczowe

EN

silicon; laser radiation; p-n junction; solar cell; hot carriers

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 2
• Strony: 337--340
• Opis fizyczny: Bibliogr. 11 poz., rys.

Twórcy

autor

Ašmontas S.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Gradauskas J.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Sužiedėlis A.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Šilėnas A.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Širmulis E.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Švedas V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Vaičikauskas V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Vaičiūnas V.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Žalys O.

• Center for Physical Sciences and Technology, Vilnius, Lithuania

autor

Kostylyov V.

• V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Kyiv, Ukraine

Bibliografia

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• [8] AŠMONTAS S., GRADAUSKAS J., SUŽIEDĖLIS A., ŠILĖNAS A., ŠIRMULIS E., VAIČIKAUSKAS V., VAIČIŪNAS V., ŽALYS O., FEDORENKO L., BULAT L., Opt. Quant. Electron., 48 (2016), 448.
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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).