Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3

• Autorzy: Vorobets G. I. , Strebezhev V. V. , Tkach V. M. , Vorobets O. I. , Strebezhev V. M.
• Języki publikacji: EN

Abstrakty

EN

The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.

Słowa kluczowe

EN

semiconductor thin film; epitaxial layer; laser treatment; indium selenide; indium telluride

• Wydawca: Tomasz Mariusz Majka
• Czasopismo: Journal of Education and Technical Sciences
• Rocznik: 2015
• Tom: Vol. 2, nr 1
• Strony: 5--8
• Opis fizyczny: Bibliogr. 6 poz., rys., tab.

Twórcy

autor

Vorobets G. I.

• Yurii Fedkovych Chernivtsi National University, Department of Computer Systems and Networks. 2, Kotsubynskiy Str., Chernivtsi, Ukraine 58012

autor

Strebezhev V. V.

• Yurii Fedkovych Chernivtsi National University, Department of Physica of Semiconductors and Nanostructures, 2, Kotsubynskiy Str., Chernivtsi, Ukraine 58012

autor

Tkach V. M.

• National Academy of Sciencesof Ukraine, V.Bakul Institute for Superhard Materials, 2, Avtozavodska St., Kyiv, 04074, Ukraine

autor

Vorobets O. I.

• Yurii Fedkovych Chernivtsi National University, Department of Computer Systems and Networks. 2, Kotsubynskiy Str., Chernivtsi, Ukraine 58012

autor

Strebezhev V. M.

• Yurii Fedkovych Chernivtsi National University, Department of Physica of Semiconductors and Nanostructures, 2, Kotsubynskiy Str., Chernivtsi, Ukraine 58012

Bibliografia

• [1] V. P. Zlomanov, A. V. Novosyiolova, P-T-x-of the Phase Diagram of Systems Metal – Chalcogen, Moscow (1987) p. 23. [On Russia]
• [2] R. J. Keyes et al., Optical and Infrared Detectors, Springer-Verlag Berlin, Heidelberg, New York (1985) p. 64
• [3] G. I. Vorobets et al., Applied Surface Science 247, 590 (2005)
• [4] Z.Yu. Gotra, Laser methods in microelectronics, L’viv (1991) p. 92. [On Russia]
• [5] G. I. Vorobets et al., Functional Materials 12, 107 (2005)
• [6] T. A. Melnychuk et al., Applied Surface Science 254, 1002 (2007)