Effect of a weak ion beam treatment of emission layer on the top emission polymer light-emitting diode

• Autorzy: Gong T , Gwag J S

Identyfikatory

DOI

10.5277/oa140407

• Języki publikacji: EN

Abstrakty

EN

This study examined the influence of a weakly treated emission layer on ion beam processing for the performance of top emission polymer light-emitting diodes with an invert structure (top ITO as the anode). The emission layer used in this experiment was a polymer type SY, Livilux PDY-132 provided by Merck & Co. The surface of the emission layer was modified by a low energy ion beam treatment to obtain hydrophilic functional groups and improve the wettability. As a hole transfer layer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, CLEVIOS AI 4083, Heraeus) was spin-coated on the ion beam treated emission layer and showed good adhesion properties. Consequently, through such an ion beam treatment that promotes the interface properties of these two layers, a uniform light emitting area was obtained and the light intensity in a top emission polymer light-emitting diode was improved.

Słowa kluczowe

EN

organic light emitting diode; light-emitting polymer; top emission; optical device; ion beam; surface treatment

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2014
• Tom: Vol. 44, nr 4
• Strony: 567--574
• Opis fizyczny: Bibliogr. 14 poz., rys., wykr., tab.

Twórcy

autor

Gong T

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea

autor

Gwag J S

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea

Bibliografia

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