Hydrothermal synthesis and thermoelectric properties of PbS

• Autorzy: Zhang H. , Wang H. , Zhu H. , Li H. , Su T. , Li S. , Hu M. , Fan H.

Identyfikatory

DOI

10.1515/msp-2016-0098

• Języki publikacji: EN

Abstrakty

EN

In this paper, hydrothermal approach combined with high pressure sintering method was employed to synthesize PbS. The X-ray diffraction results show that single phase PbS can be obtained by a simple hydrothermal method. The scanning electron microscope results show that the PbS sample has nearly cubic shape and preserves well crystallized and coarse grains after high pressure sintering. The thermoelectric performance of PbS obtained in this study is comparable to that of a PbS sample prepared by conventional method. The carrier type and concentration of PbS can be tuned effectively by doping with Bi. The maximum figure of merit for PbS doped with 1 mol% Bi reaches 0.44 at 550 K, which is about 30 % higher than that of undoped PbS. These results indicate that hydrothermal method provides a viable and controllable way of tuning the electrical transport and thermoelectric properties for PbS.

Słowa kluczowe

EN

PbS; hydrothermal approach; thermoelectric performance; high pressure

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 754--759
• Opis fizyczny: Bibliogr. 22 poz., rys., tab.

Twórcy

autor

Zhang H.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Wang H.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Zhu H.

• School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Li H.

• Shanghai Entry-Exit Inspection & Quarantine Bureau, Shanghai, 200135, China

autor

Su T.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Li S.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Hu M.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

autor

Fan H.

• Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, 454000, China

Bibliografia

• [1] GIRARD S.N., SCHMIDT ROHR K., CHASAPIS T.C., Adv. Funct. Mater., 23 (2013), 747.
• [2] SNYDER G.J., TOBERER E.S., Nat. Mater., 7 (2008), 105.
• [3] HEREMANS J.P., JOVOVIC V., TOBERER E.S., Science, 321 (2008), 554.
• [4] URBAN J.J., TALAPIN D.V., SHEVCHENKO E.V., Nat. Mater., 6 (2007), 115.
• [5] DISALVO F.J., Science, 285 (1999), 703.
• [6] LEE Y., LO S.H., CHEN C., Nat. Commun., 5 (2014), 4640.
• [7] RAVICH I.I., Semiconducting Lead Chalcogenides, Springer US, New York, 2013.
• [8] ZHAO L.D., HE J., HAO S., J. Am. Chem. Soc., 134 (2012), 16327.
• [9] WU H., CARRETE J., ZHANG Z., NPG Asia. Mater., 6 (2014), e108.
• [10] LIU W., LUKAS K C., MCENANEY K., Energ. Environ. Sci., 6 (2013), 552.
• [11] WANG H., SCHECHTEL E., PEI Y., Adv. Energ. Mater., 3 (2013), 488.
• [12] KIM H.S., GIBBS Z.M., TANG Y., SNYDER G.J., APL Mater., 3 (2015), 041506.
• [13] ZHU T.J., CHEN X., CAO Y Q., J. Phys. Chem. C, 113 (2009), 8085.
• [14] ZHAO X., JI X., ZHANG Y., Appl. Phys. Lett., 86 (2005), 062111.
• [15] CAO Y., ZHAO X., ZHU T., Appl. Phys. Lett., 92 (2008), 3106.
• [16] TANG X., XIE W, LI H., Appl. Phys. Lett., 90 (2007), 12102.
• [17] ALBONI P., JI X., HE J., J. Appl. Phys., 103 (2008), 113707.
• [18] JOHNSEN S., HE J., ANDROULAKIS J., J. Am. Chem. Soc., 133 (2011), 3460.
• [19] KUANG D., XU A., FANG Y., Adv. Mater., 15 (2003), 1747.
• [20] PEI Y.L., LIU Y., J. Alloy. Compd., 514 (2012), 40.
• [21] MAHAN G., Solid State Phys., 51 (1997), 81.
• [22] LI D., YANG K., HNG H., J. Appl. Phys., 104(2008), 103720.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).