Influence of junction temperature on the spectral power distribution of Light Emitting Diodes

• Autorzy: Budzyński Ł
• Języki publikacji: EN

Abstrakty

EN

This article describes electrical method for measuring junction temperature of high power LEDs. Measurement system consisting of a temperature controller and a thermostatic chamber was designed and constructed. A number of studies of LEDs in a typical thermal conditions that exist in luminaries were performed. Basing on these results, influence of junction temperature on luminous flux and spectral power distribution of LED was determined. Obtained results allow to optimize the construction of LED lighting fixtures, in the ambient temperature range from 0°C to 100°C, especially in the aspect of improving the photometric properties of the luminaire.

Słowa kluczowe

EN

LED; junction temperature; spectral power; measurement

PL

LED; temperatura złącza; widmo mocy; pomiary

• Wydawca: Foundation for Young Scientists
• Czasopismo: Challenges of Modern Technology
• Rocznik: 2015
• Tom: Vol. 6, no. 4
• Strony: 3--7
• Opis fizyczny: Bibliogr. 6 poz., rys., tab.

Twórcy

autor

Budzyński Ł

• Białystok University of Technology, Electrical Department Wiejska 45D, 15-351 Białystok, Poland

Bibliografia

• [1] Schubert E. F.: Light-Emitting Diodes, Cambridge University Press 2006
• [2] Pässler R.: Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors, Physica Status Solidi Volume 216, Issue 2, 1999
• [3] Vaitonis Z., Stonkus A., Zukauskas A.: Effect of junction temperature oscillation on output characteristics of a light-emitting diode under pulse-width and pulse-frequency modulation driving modes, IET Optoelectronics, 2012, Vol. 6, Iss. 1
• [4] Roscam Abbing, F.D., Pertijs, M.A.P.: Light-emitting diode junction-temperature sensing using differential voltage/current measurements, IEEE Sensors, pages 861 – 864, 2011
• [5] EIA JEDEC Standard JESD51-1 Intergrated Circuits Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device), 1995
• [6] Budzyński Ł., Iwanowicz K., Zajkowski M.: Temperature characteristics of p-n junction high power LEDs in the typical ope - rating conditions, Proc. of SPIE Vol. 8903, 2013