Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

• Autorzy: Yoffe A. , Zon I. , Feldman Y. , Shelukhin V.

Identyfikatory

DOI

10.1515/msp-2015-0088

• Języki publikacji: EN

Abstrakty

EN

A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C₄F₈/Ar/N₂ mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+ N₂) and C₄F₈ - 1:1 and between N2 and Ar - 1:2 in the N₂/Ar/C₄F₈ mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Słowa kluczowe

EN

carbon deposition; reactive plasma; fluoridation

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 606--611
• Opis fizyczny: Bibliogr. 25 poz., rys.

Twórcy

autor

Yoffe A.

• Weizmann Institute of Science, Rehovot, Israel

autor

Zon I.

• Weizmann Institute of Science, Rehovot, Israel

autor

Feldman Y.

• Weizmann Institute of Science, Rehovot, Israel

autor

Shelukhin V.

• Tel Aviv University, Tel Aviv, Israel

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