PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Tytuł artykułu

Analysis of High-Performance Near-threshold Dual Mode Logic Design

Treść / Zawartość
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
A novel dual mode logic (DML) model has a superior energy-performance compare to CMOS logic. The DML model has unique feature that allows switching between both modes of operation as per the real-time system requirements. The DML functions in two dissimilar modes (static and dynamic) of operation with its specific features, to selectively obtain either low-energy or high-performance. The sub-threshold region DML achieves minimum-energy. However, sub-threshold region consequence in performance is enormous. In this paper, the working of DML model in the moderate inversion region has been explored. The near-threshold region holds much of the energy saving of subthreshold designs, along with improved performance. Furthermore, robustness to supply voltage and sensitivity to the process temperature variations are presented. Monte carol analysis shows that the projected near-threshold region has minimum energy along with the moderate performance.
Rocznik
Strony
723--729
Opis fizyczny
Bibliogr. 34 poz., wykr., rys., tab.
Twórcy
  • National Institute of Technology Andhra Pradesh, India
Bibliografia
  • [1] H. Ni and J. Hu, “Near-threshold sequential circuits using improved clocked adiabatic logic in 45nm CMOS processes,” Midwest Symp. Circuits Syst., pp. 5–8, 2011.
  • [2] M. Kavitha and T. Govindaraj, “Low-Power Multimodal Switch for Leakage Reduction and Stability Improvement in SRAM Cell,” Arab. J. Sci. Eng., vol. 41, no. 8, pp. 2945–2955, 2016.
  • [3] R. Gonzalez, B. M. Gordon, and M. A. Horowitz, “Supply and threshold voltage scaling for low power CMOS,” IEEE J. Solid-State Circuits, vol. 32, no. 8, pp. 1210–1216, 1997.
  • [4] T. Kuroda, K. Suzuki, S. Mita, T. Fujita, F. Yamane, F. Sano, A. Chiba, Y. Watanabe, K. Matsuda, T. Maeda, T. Sakurai, and T. Furuyama, “Variable supply-voltage scheme for low-power high-speed CMOS digital design,” IEEE J. Solid-State Circuits, vol. 33, no. 3, pp. 454–461, 1998.
  • [5] D. Marković, V. Stojanović, B. Nikolić, M. A. Horowitz, and R. W. Brodersen, “Methods for true energy-performance optimization,” IEEE J. Solid-State Circuits, vol. 39, no. 8, pp. 1282–1293, 2004.
  • [6] K. Nose and T. Sakurai, “Optimization of VDD and VTH for low-power and high speed applications,” Proc. 2000 Conf. Asia South Pacific Des. Autom. - ASP-DAC ’00, pp. 469–474, 2000.
  • [7] S. W. Sun and P. G. Y. Tsui, “Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation,” IEEE J. Solid-State Circuits, vol. 30, no. 8, pp. 947–949, 1995.
  • [8] V. De and S. Borkar, “Technology and Design Challenges for Low Power and High Performance,” Proceeding Int. Symp. Low Power Electron. Des., pp. 163–168, 1999.
  • [9] M. A. Al-Absi, “Low Voltage and Low Power Current-Mode Divider and 1/X Circuit Using MOS Transistor in Subthreshold,” Arab. J. Sci. Eng., vol. 38, no. 9, pp. 2411–2414, 2013.
  • [10] M. Alioto, G. Palumbo, and M. Pennisi, “Understanding the effect of process variations on the delay of static and domino logic,” IEEE Trans. Very Large Scale Integr. Syst., vol. 18, no. 5, pp. 697–710, 2010.
  • [11] A. P. Chandrakasan, S. Sheng, and R. W. Brodersen, “Low-power CMOS digital design,” IEICE Trans. Electron., vol. 75, no. 4, pp. 371–382, 1992.
  • [12] F. Moradi, T. Vu Cao, E. I. Vatajelu, A. Peiravi, H. Mahmoodi, and D. T. Wisland, “Domino logic designs for high-performance and leakage-tolerant applications,” Integr. VLSI J., vol. 46, no. 3, pp. 247–254, 2013.
  • [13] Y. Jiang, A. Al-Sheraidah, Y. Wang, E. Sha, and J. G. Chung, “A novel multiplexer-based low-power full adder,” IEEE Trans. Circuits Syst. II Express Briefs, vol. 51, no. 7, pp. 345–348, 2004.
  • [14] S. Yuan, Y. Li, Y. Yuan, and Y. Liu, “Pass transistor with dual threshold voltage domino logic design using standby switch for reduced subthreshold leakage current,” Microelectronics J., vol. 44, no. 12, pp. 1099–1106, 2013.
  • [15] A. Peiravi and M. Asyaei, “Current-comparison-based domino: New low-leakage high-speed domino circuit for wide fan-in gates,” IEEE Trans. Very Large Scale Integr. Syst., vol. 21, no. 5, pp. 934–943, 2013.
  • [16] I. Levi, S. Member, and A. Fish, “Dual Mode Logic — Design for Energy Efficiency and High Performance,” vol. 1, 2013.
  • [17] I. Levi, A. Belenky, and A. Fish, “Logical effort for CMOS-based dual mode logic gates,” IEEE Trans. Very Large Scale Integr. Syst., vol. 22, no. 5, pp. 1042–1053, 2014.
  • [18] D. Markovic, C. C. Wang, L. P. Alarcon, T. Te Liu, and J. M. Rabaey, “Ultralow-power design in near-threshold region,” Proc. IEEE, vol. 98, no. 2, pp. 237–252, 2010.
  • [19] V. De, “Near-Threshold Voltage Design in Nanoscale CMOS,” p. 2012, 2012.
  • [20] J. G. Delgado-Frias, Z. Zhang, and M. A. Turi, “Near-threshold CNTFET SRAM cell design with removed metallic CNT tolerance,” Proc. - IEEE Int. Symp. Circuits Syst., vol. 2015–July, no. 2, pp. 2928–2931, 2015.
  • [21] H. Kaul, M. Anders, S. Hsu, A. Agarwal, and R. Krishnamurthy, “Near-Threshold Voltage ( NTV ) Design — Opportunities and Challenges.”
  • [22] R. G. Dreslinski, M. Wieckowski, D. Blaauw, D. Sylvester, and T. Mudge, “Near-threshold computing: Reclaiming moore’s law through energy efficient integrated circuits,” Proc. IEEE, vol. 98, no. 2, pp. 253–266, 2010.
  • [23] D. M. Harris, B. Keller, J. Karl, and S. Keller, “A transregional model for near-threshold circuits with application to minimum-energy operation,” Proc. Int. Conf. Microelectron. ICM, pp. 64–67, 2010.
  • [24] F. Crupi, D. Albano, M. Alioto, J. Franco, L. Selmi, J. Mitard, and G. Groeseneken, “Impact of high-mobility materials on the performance of near- and sub-threshold CMOS logic circuits,” IEEE Trans. Electron Devices, vol. 60, no. 3, pp. 972–977, 2013.
  • [25] T. Sakurai and a. R. Newton, “Alpha-power law MOSFET model and its applications to CMOS inverter\ndelay and other formulas,” IEEE J. Solid-State Circuits, vol. 25, no. 2, pp. 584–594, 1990.
  • [26] B. J. Sheu, D. L. Scharfetter, P. K. Ko, and M. C. Jeng, “BSIM: Berkeley Short-Channel IGFET Model for MOS Transistors,” IEEE J. Solid-State Circuits, vol. 22, no. 4, pp. 558–566, 1987.
  • [27] M. H. Na, E. J. Nowak, W. Haensch, and J. Cai, “The effective drive current in CMOS inverters,” Dig. Int. Electron Devices Meet., pp. 121–124, 2002.
  • [28] B. H. Calhoun, A. Wang, and A. Chandrakasan, “Modeling and sizing for Minimum Energy Operation in Subthreshold Circuits,” IEEE J. Solid-State Circuits, vol. 40, no. 9, pp. 1778–1785, 2005.
  • [29] B. Zhai, D. Blaauw, D. Sylvester, and K. Flautner, “The limit of dynamic voltage scaling and insomniac dynamic voltage scaling,” IEEE Trans. Very Large Scale Integr. Syst., vol. 13, no. 11, pp. 1239–1252, 2005.
  • [30] I. Levi, A. Kaizerman, and A. Fish, “Low voltage dual mode logic: Model analysis and parameter extraction,” Microelectronics J., vol. 44, no. 6, pp. 553–560, 2013.
  • [31] M. Asyaei, “A new leakage-tolerant domino circuit using voltage-comparison for wide fan-in gates in deep sub-micron technology,” Integr. VLSI J., vol. 51, pp. 61–71, 2015.
  • [32] J. C. Park, V. J. Mooney, and P. Pfeiffenberger, “Sleepy stack reduction of leakage power,” Lect. notes Comput. Sci., vol. 14, no. 11, pp. 148–158, 2004.
  • [33] M. C. Johnson, D. Somasekhar, L. Y. Chiou, and K. Roy, “Leakage control with efficient use of transistor stacks in single threshold CMOS,” IEEE Trans. Very Large Scale Integr. Syst., vol. 10, no. 1, pp. 1–5, 2002.
  • [34] B. H. Calhoun, F. A. Honoré, and A. P. Chandrakasan, “A leakage reduction methodology for distributed MTCMOS,” IEEE J. Solid-State Circuits, vol. 39, no. 5, pp. 818–826, 2004.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-be34cd3e-bce6-48b9-9f8b-dab27a043b5d
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.