Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes

• Autorzy: Ćwirko J. , Ćwirko R. , Mikołajczyk J.

Identyfikatory

DOI

10.1515/mms-2015-0010

• Języki publikacji: EN

Abstrakty

EN

The paper presents a study of the performance of some selected UV detectors. Unlike many similar works, the obtained data refer to commercial photodiodes (not only to detector materials). The main task of the research was to determine the influence of the operating temperature and annealing on the detector spectral responsiveness. A comparison of the results obtained for the photodiodes made of GaN and SiC was also performed. Although both kinds of detectors can work at high temperatures for a long time, some modification of their properties was observed. However, for GaN and SiC photodiodes, this modification has a substantially different nature. It is very important for some applications, e.g. fire alarms and a military equipment.

Słowa kluczowe

EN

optical detectors; UV radiation; photodiode; GaN detector; SiC detector

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2015
• Tom: Vol. 22, nr 1
• Strony: 119--126
• Opis fizyczny: Bibliogr. 11 poz., fot., rys., wykr.

Twórcy

autor

Ćwirko J.

• Military University of Technology, Faculty of Electronics, Institute of Electronic Systems, S.Kaliskiego 2, 00-908 Warsaw, Poland

autor

Ćwirko R.

• Military University of Technology, Faculty of Electronics, Institute of Electronic Systems, S.Kaliskiego 2, 00-908 Warsaw, Poland

autor

Mikołajczyk J.

• Military University of Technology, Institute of Optoelectronics, S.Kaliskiego 2, 00-908 Warsaw, Poland

Bibliografia

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