Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system

• Autorzy: Ciura Ł. , Kolek A. , Gawron W. , Kowalewski A. , Stanaszek D.

Identyfikatory

DOI

10.2478/mms-2014-0039

• Języki publikacji: EN

Abstrakty

EN

The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

Słowa kluczowe

EN

1/f noise; infrared detectors; nBn structure; HgCdTe heterostructures; noise measurements; transimpedance detection system; type II InAs/GaSb superlattice

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2014
• Tom: Vol. 21, nr 3
• Strony: 461--472
• Opis fizyczny: Bibliogr. 17 poz., rys., wykr., wzory

Twórcy

autor

Ciura Ł.

• Rzeszów University of Technology, Department of Electronic Fundamentals, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland (669212770)

autor

Kolek A.

• Rzeszów University of Technology, Department of Electronic Fundamentals, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Gawron W.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland ([phone])

autor

Kowalewski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland

autor

Stanaszek D.

• Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland ([phone])

Bibliografia

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