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This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
Słowa kluczowe
Rocznik
Tom
Strony
147--154
Opis fizyczny
Bibliogr. 43 poz., rys., tab., wykr.
Twórcy
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
Bibliografia
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- [5] M.T. Hardy et al., “Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes”, Appl. Phys. Lett., 103 (8), 081103 (2013).
- [6] M. Kuc, R.P. Sarzała, and W. Nakwaski, “Thermal crosstalk in arrays of III-N-based Lasers”, Mater. Sci Eng. B 178 (20), 1395–1402 (2013).
- [7] M. Kuc, R.P. Sarzała, S. Stańczyk, and P. Perlin, “Numerical investigation of an impact of a top gold metallization on output power of a p-up III-N-based blue-violet edge-emitting laser diode”, Opto-Electron. Rev. 23 (2), 131–136 (2015).
- [8] M. Kuc et al., “Optical simulations of blue and green semipolar InGaN/GaN lasers”, Proc. SPIE 10532, 1053228 (2018).
- [9] A.K. Sokół, Ł. Piskorski, M. Kuc, M. Wasiak, and R.P. Sarzała, “Concept of the CW GaN-based VECSEL”, Proc. SPIE 10515, 105150X (2018).
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- [11] L. Wang, J. Wen, C. Yang, and B. Xiong, “Potential of ITO thin film for electrical probe memory applications”, Sci. Technol. Adv. Mater. 19 (1), 791–801 (2018).
- [12] M. Soltani, R. Soref, T. Palacios, and D. Englund, “AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range”, Opt. Express 24 (22), 25415–25423 (2016).
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- [24] M.M. Mensi et al., “Direct measurement of nanoscale lateral carrier diffusion: toward scanning diffusion microscopy”, ACS Photonics 5 (2), 528–534 (2018).
- [25] R. Aleksiejūnas et al., “Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique”, Phys. Stat. Sol. C 0 (7), 2686–2690 (2003).
- [26] P. Ščajev, K. Jarašiūnas, S. Okur, Ü. Özgür, and H. Morkoç, “Carrier dynamics in bulk GaN”, J. Appl. Phys. 111 (2), 023702 (2012).
- [27] F. Nippert, “Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal timeresolved photoluminescence”, Jpn. J. Appl. Phys. 55 (5S), 05FJ01 (2016).
- [28] F. Nippert, “Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap”, Appl. Phys. Lett. 109 (16), 161103 (2016).
- [29] J. Piprek, F. Römer, and B. Witzigmann, “On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements”, Appl. Phys. Lett. 106 (10), 101101 (2015).
- [30] P. Tian, “Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes”, Appl. Phys. Lett. 105 (17), 171107 (2014).
- [31] W.G. Scheibenzuber, “Recombination coefficients of GaN-based laser diodes”, J. Appl. Phys. 109 (9), 093106 (2011).
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- [33] D.S. Meyaard et al., “On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes”, Appl. Phys. Lett. 99 (4), 041112 (2011).
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- [36] S.Yu. Karpov, “Effect of localized states on internal quantum efficiency of III-nitride LEDs”, Phys. Stat. Sol. RRL 4 (11), 320–322 (2010).
- [37] Ł. Piskorski, L. Frasunkiewicz, and R.P. Sarzała, “Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range”, Bull. Pol. Ac.: Tech. 63 (3), 597–603 (2015).
- [38] Y.C. Shen, G.O. Mueller, S. Watanabe, N.F. Gardner, A. Munkholm, and M.R. Krames, “Auger recombination in InGaN measured by photoluminescence”, Appl. Phys. Lett. 91 (14), 141101 (2007).
- [39] M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In 0.1Ga0.9 N/GaN quantum wells and its impact on the efficiency of In0.1 Ga0.9 N/GaN multiple quantum well light emitting diodes”, Appl. Phys. Lett. 95 (20), 201108 (2009).
- [40] H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect”, AIP Adv. 6 (6), 065013 (2016).
- [41] P. Li, Y. Zhao, X. Yi, and H. Li, “Effects of a reduced effective active region volume on wavelength-dependent efficiency droop of InGaN-based light-emitting diodes”, Appl. Sci. 8 (11), 2138 (2018).
- [42] T. Swietlik, G. Franssen, R. Czernecki, M. Leszczynski, C. Skierbiszewski, I. Grzegory, T. Suski, P. Perlin, C. Lauterbach and U.T. Schwarz, “Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate”, J. Appl. Phys. 101 (8), 083109 (2007).
- [43] M. Malinverni et al., “InGaN laser diodes emitting at 500 nm with players grown by molecular beam epitaxy”, Appl. Phys. Express 8 (2), 022105 (2015).
Uwagi
PL
Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-bc2e0d56-44dc-4ed4-b408-fb576e6ef7db