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This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
Słowa kluczowe
Rocznik
Tom
Strony
147--154
Opis fizyczny
Bibliogr. 43 poz., rys., tab., wykr.
Twórcy
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
autor
- Institute of Physics, Lodz University of Technology
Bibliografia
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- [25] R. Aleksiejūnas et al., “Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique”, Phys. Stat. Sol. C 0 (7), 2686–2690 (2003).
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- [29] J. Piprek, F. Römer, and B. Witzigmann, “On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements”, Appl. Phys. Lett. 106 (10), 101101 (2015).
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- [37] Ł. Piskorski, L. Frasunkiewicz, and R.P. Sarzała, “Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range”, Bull. Pol. Ac.: Tech. 63 (3), 597–603 (2015).
- [38] Y.C. Shen, G.O. Mueller, S. Watanabe, N.F. Gardner, A. Munkholm, and M.R. Krames, “Auger recombination in InGaN measured by photoluminescence”, Appl. Phys. Lett. 91 (14), 141101 (2007).
- [39] M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, “Direct measurement of auger recombination in In 0.1Ga0.9 N/GaN quantum wells and its impact on the efficiency of In0.1 Ga0.9 N/GaN multiple quantum well light emitting diodes”, Appl. Phys. Lett. 95 (20), 201108 (2009).
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- [42] T. Swietlik, G. Franssen, R. Czernecki, M. Leszczynski, C. Skierbiszewski, I. Grzegory, T. Suski, P. Perlin, C. Lauterbach and U.T. Schwarz, “Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate”, J. Appl. Phys. 101 (8), 083109 (2007).
- [43] M. Malinverni et al., “InGaN laser diodes emitting at 500 nm with players grown by molecular beam epitaxy”, Appl. Phys. Express 8 (2), 022105 (2015).
Uwagi
PL
Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).
Typ dokumentu
Bibliografia
Identyfikator YADDA
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