Use of computer modeling for defect engineering in Czochralski silicon growth

• Autorzy: Artemyev Vladimir , Smirnov Andrey , Kalaev Vladimir , Mamedov Vasif , Sid'ko A. , Wejrzanowski Tomasz , Grybczuk Mateusz , Dold Peter , Kunert Roland
• Języki publikacji: EN

Abstrakty

EN

The yield and quality of silicon wafers are mostly determined by defects, including grain boundaries, dislocations, vacancies, interstitials, and vacancy and oxygen clusters. Active generation and multiplication of dislocations during Czochralski monosilicon crystal growth is almost always followed by a transition to multicrystalline material and is called structure loss. Possible factors in structure loss are related to high thermal stresses, fluctuations of local crystallization rate caused by melt flow turbulence, melt undercooling and incorporation of solid particles from the melt into the crystal. Experimental analysis of dislocation density distributions in grown crystals contributes to an understanding of the key reasons for structure loss: particle incorporation at the crystallization front and strong fluctuations of crystallization rate with temporal remelting. Comparison of experimental dislocation density measurements and modeling results calculated using the Alexander-Haasen model showed good agreement for silicon samples. The Alexander-Haasen model provides reasonably accurate results for dislocation density accompanying structure loss phenomena and can be used to predict dislocation density and residual stresses in multicrystalline Czochralski silicon ingots, which are grown for the purpose of manufacturing polysilicon rods for Siemens reactors and silicon construction elements.

Słowa kluczowe

EN

Czochralski method; silicon crystal; structure loss; dislocation density

PL

metoda Czochralskiego; kryształy krzemu; gęstość dyslokacji

• Wydawca: Institute of Heat Engineering, Warsaw University of Technology
• Czasopismo: Journal of Power Technologies
• Rocznik: 2019
• Tom: Vol. 99, nr 2
• Strony: 163--169
• Opis fizyczny: Bibliogr. 18 poz., rys., tab., wykr.

Twórcy

autor

Artemyev Vladimir

• STR Group, Inc., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 605, St. Petersburg, 194044, Russian Federation

autor

Smirnov Andrey

• Soft-Impact, Ltd., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 603, St. Petersburg, 194044, Russian Federation
• STR Group, Inc., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 605, St. Petersburg, 194044, Russian Federation

autor

Kalaev Vladimir

• Soft-Impact, Ltd., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 603, St. Petersburg, 194044, Russian Federation
• STR Group, Inc., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 605, St. Petersburg, 194044, Russian Federation

autor

Mamedov Vasif

• Soft-Impact, Ltd., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 603, St. Petersburg, 194044, Russian Federation

autor

Sid'ko A.

• Soft-Impact, Ltd., 64 Bolshoi Sampsonievskii pr., Build. "E", Office 603, St. Petersburg, 194044, Russian Federation

autor

Wejrzanowski Tomasz

• Warsaw University of Technology, Faculty of Materials Science and Engineering, Woloska 141, 02-507 Warsaw, Poland

autor

Grybczuk Mateusz

• Warsaw University of Technology, Faculty of Materials Science and Engineering, Woloska 141, 02-507 Warsaw, Poland

autor

Dold Peter

• Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eissfeldt-Strasse 12, 06120 Halle, Germany

autor

Kunert Roland

• Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eissfeldt-Strasse 12, 06120 Halle, Germany

Bibliografia

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).