Ag₈SnSe₆ argyrodite synthesis and optical properties

• Autorzy: Semkiv I. , Ilchuk H. , Pawlowski B. , Kusnezh V.

Identyfikatory

DOI

10.1016/j.opelre.2017.04.002

• Języki publikacji: EN

Abstrakty

EN

The Ag₈SnSe₆ argyrodite compound was synthesized by the direct melting of the elementary Ag, Sn and Se high purity grade stoichiometric mixture in a sealed silica ampoule. The prepared polycrystalline material was characterized by the X-ray diffraction (XRD), visible (VIS) and near-infrared (NIR) reflection and photoluminescence (PL) spectroscopy. XRD showed that the Ag₈SnSe₆ crystallizes in orthorhombic structure, Pmn2₁ space group with lattice parameters: ɑ = 7.89052(6) Ǻ, b = 7.78976(6) Ǻ, c = 11.02717(8) Ǻ. Photo-luminescence spectra of the Ag₈SnSe₆ polycrystalline wafer show two bands at 1675 nm and 1460 nm. Absorption edge position estimated from optical reflectance spectra is located in the 14131540 nm wavelength range.

Słowa kluczowe

EN

argyrodite; semiconductors; X-ray diffraction; optical spectroscopy; luminescence

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 1
• Strony: 37--40
• Opis fizyczny: Bibliogr. 32 poz., wykr.

Twórcy

autor

Semkiv I.

• Lviv Polytechnic National University, Physics Department, S. Bandera 12, 79013 Lviv, Ukraine

autor

Ilchuk H.

• Lviv Polytechnic National University, Physics Department, S. Bandera 12, 79013 Lviv, Ukraine

autor

Pawlowski B.

• Warsaw University of Technology, Faculty of Physics, Semiconductor Division, Koszykowa 75, 00-662 Warszawa, Poland

autor

Kusnezh V.

• Lviv Polytechnic National University, Physics Department, S. Bandera 12, 79013 Lviv, Ukraine

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)